Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy

Hierro, A.; Arehart, A. R.; Heying, B.; Hansen, M.; Mishra, U. K.; DenBaars, S. P.; Speck, J. S.; Ringel, S. A.
February 2002
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p805
Academic Journal
The effect of growth regime on the deep level spectrum of n-GaN using molecular-beam epitaxy (MBE) was investigated. As the Ga/N flux ratio was decreased towards Ga-lean conditions, the concentration of two acceptor-like levels, at E[sub c]-3.04 and 3.28 eV, increased from 10[sup 15] to 10[sup 16] cm[sup -3] causing carrier compensation in these films. Thus, these two traps behaved as the dominant compensating centers in MBE n-GaN. Furthermore, the increase in trap concentration also strongly correlated with the degradation of both surface morphology and bulk electron mobility towards Ga-lean conditions, where higher pit densities and lower mobility were observed. These results show that the growth regime directly impacts all morphology, bulk transport, and trap states in n-GaN. © 2002 American Institute of Physics.


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