Nanoscale organic transistors based on self-assembled monolayers

Scho¨n, J. H.; Bao, Z.
February 2002
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p847
Academic Journal
A device structure is reported for the fabrication of nanoscale organic transistors. In this structure, a self-assembled monolayer is used to define the channel length, as well as acting as the semiconducting material. High current modulation and high current output are demonstrated with 4,4′-dithiolbiphenylene. Various dielectric materials, such as SiO[sub 2], Al[sub 2]O[sub 3], and a self-assembled silane monolayer, have been shown to result in high-performance transistors. Finally, nanopatterning can also be achieved by using an insulating alkanethiol to define the channel length of a conventional organic field-effect transistor. © 2002 American Institute of Physics.


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