Diode and transistor behaviors of three-terminal ballistic junctions

Xu, H. Q.
February 2002
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p853
Academic Journal
We propose new applications of three-terminal ballistic junctions (TBJs) in nanoelectronics. It is found that for a TBJ with one of its three branch contacts, say the right branch contact, being grounded, the output voltage, V[sub c], from the central branch as a function of the voltage, V[sub l], applied to the left branch shows a diode characteristic: V[sub c] approximately follows V[sub l] linearly when V[sub l] is negative, and saturates at a small positive value when V[sub l] becomes positive. It is also found that the saturation level of V[sub c] as well as the threshold value of V[sub l], beyond which V[sub c] saturates, can be modulated by application of a voltage, V[sub r], to the right branch contact of the TBJ. Thus, the TBJ can also be used as a transistor. TBJ diodes and TBJ transistors with dimensions on the order of sub 100 nm, or much less, can be made from standard high-quality electronic materials with state-of-the-art nanofabrication technology. © 2002 American Institute of Physics.


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