Simple fabrication scheme for sub-10 nm electrode gaps using electron-beam lithography

Liu, K.; Avouris, Ph.; Bucchignano, J.; Martel, R.; Sun, S.; Michl, J.
February 2002
Applied Physics Letters;2/4/2002, Vol. 80 Issue 5, p865
Academic Journal
An innovative and simple method, based on electron-beam (e-beam) overlapping and overexposure techniques, is developed to fabricate sub-10 nm electrode gaps with very good electrical properties. Gaps with 4 to 10 nm spacing can be fabricated using a proper e-beam dose and pattern-developing time. The fabrication yield is nearly 100% for 8–9 nm gaps, but significantly smaller for 3–4 nm gaps. The gap leakage resistance is around 10[sup 12]–10[sup 13] Ω, implying very good isolation. As an example, we present a transport study on a single 8 nm Co particle junction using a 10 nm gap. © 2002 American Institute of Physics.


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