Vitreous GeO[sub 2] response to shock loading

Liu, C.; Ahrens, Thomas J.; Brar, N. S.
April 2000
AIP Conference Proceedings;2000, Vol. 505 Issue 1, p275
Academic Journal
Shock wave profiles in vitreous GeO[SUB2] (6.56 Mg/m[SUP3]) under planar loading were measured using stress gauges to 14 GPa. New and previous data yield Hugoniot: D = 0.974 (kin/s) + 1.711 u for shocks of 6 to 40 GPa. We show that the phase change from 4- to 6-fold coordination of Ge[SUP+4] with O[SUP-2] in vitreous GeO[SUB2] occurs from 4 to 15 GPa. Hugoniots of vitreous GeO[SUB2] and SiO[SUB2] are found to approximately coincide if the pressure in SiO[SUB2] is scaled by the ratio of SiO[SUB2] to GeO[SUB2] initial density.


Related Articles

  • Quantum chemical modelling of the structure and properties of hypervalent defects in vitreous SiO[sub 2] and GeO[sub 2]. Zyubin, A. S.; Dembovskiı, S. A. // Physics of the Solid State;Aug99, Vol. 41 Issue 8, p1298 

    A cluster approximation using a semiempirical MNDO-PM3 scheme is used to study the structure and properties of the defect structures which develop in vitreous SiO[sub 2] and GeO[sub 2] during the interaction of the previously discovered most probable defects (two-member cycles, fragments with...

  • Properties of SiGe oxides grown in a microwave oxygen plasma. Mukhopadhyay, M.; Ray, S. K.; Maiti, C. K.; Nayak, D. K.; Shiraki, Y. // Journal of Applied Physics;11/15/1995, Vol. 78 Issue 10, p6135 

    Focuses on a study which examined the properties of silicon germanium oxides grown in a microwave oxygen plasma. Experimental procedures; Findings of x-ray photoelectron spectroscopy of the oxide; Interfacial properties of the oxide; Information on the trapping characteristics of the oxide.

  • Nanometer-sized Ge particles in GeO2-SiO2 glasses produced by proton implantation: Combined... Hosono, Hideo; Kawamura, Ken-ichi; Kameshima, Yoshikaza; Kawazoe, Hiroshi; Matsunami, Noriaki; Muta, Ken-ichi // Journal of Applied Physics;11/1/1997, Vol. 82 Issue 9, p4232 

    Reports on the formation of nanometer-sized crystalline Ge colloid particles by implantation of protons into GeO2-SiO2 glasses. Conversion of GeO2-rich particles into Ge particles by a combined effect of electronic excitation and chemical reaction of implanted protons; Displacement of bridging...

  • Crystallization and optical nonlinearity in GeO[sub 2]-SiO[sub 2] glass poled with ArF excimer-laser irradiation. Matsumoto, Syuji; Fujiwara, Takumi; Seno, Yoshiki; Hirose, Yosiharu; Ohama, Motoshi; Ikushima, Akira J. // Journal of Applied Physics;12/15/2000, Vol. 88 Issue 12 

    We report on crystallization and second- and third-order optical nonlinearities of GeO[sub 2]-SiO[sub 2] glass poled with ArF laser irradiation. With laser power and 100 mJ/cm2/pulse, the treatment generates crystallites in the glass, provided that the poling field strength is greater than...

  • Hugoniot adiabat of a quartz-aluminum mixture. Voskoboinikov, I. // Combustion, Explosion, & Shock Waves;Mar2007, Vol. 43 Issue 2, p222 

    The Hugoniot adiabats of mixtures of quartz with aluminum are calculated with and without allowance for the chemical interaction of the components behind the shock front. It is shown that the results of experiments at pressures above 25 GPa can be explained not only by the faster phase...

  • Nonvolatile Silicon Memory Using GeO-Cladded Ge Quantum Dots Self-Assembled on SiO and Lattice-Matched II-VI Tunnel Insulator. Gogna, M.; Suarez, E.; Chan, P.-Y.; Al-Amoody, F.; Karmakar, S.; Jain, F. // Journal of Electronic Materials;Aug2011, Vol. 40 Issue 8, p1769 

    This paper presents fabrication and characterization of a quantum dot-based floating gate nonvolatile memory device with site-specific self-assembly of germanium oxide-cladded germanium (GeO-Ge) quantum dots on SiO and ZnS/ZnMgS/ZnS (II-VI lattice-matched high- κ dielectric) tunnel insulator...

  • Determination of silicon and germanium in systems based on SiO-GeO using kinetic spectrophotometry. Bayanov, V.; Rakhimova, O.; Rakhimov, V.; Syomov, M. // Glass Physics & Chemistry;Mar2014, Vol. 40 Issue 2, p221 

    The kinetics of parallel-consecutive reactions taking place during the formation of germanomolybdic and silicomolybdic heteropolyanions is studied. A kinetic model of the process is proposed, which makes it possible to calculate the kinetic parameters of the proceeding reactions according to the...

  • Effect of composition on BiO-SiO-GeO glass properties. Krasil'nikov, S.; Gorashchenko, N. // Glass & Ceramics;Sep2012, Vol. 69 Issue 5/6, p186 

    Glasses with composition Bi(SiGe)O, where x = 0.33, 0.5 and 0.06, were obtained by melting for 30 min and two-step melting. Their characteristic temperatures, densities, refractive indices and microhardness were determined and the composition dependences studied.

  • Germanium Nanoparticle Formation into Thin SiO2 Films by Negative Ion Implantation and Their Electric Characteristics. Arai, Nobutoshi; Tsuji, Hiroshi; Gotoh, Naoyuki; Okumine, Tetsuya; Yanagitani, Toshio; Harada, Masatomi; Satoh, Takeshi; Ohnishi, Hitoshi; Minotani, Takashi; Adachi, Kouichirou; Kotaki, Hiroshi; Ishibashi, Toyotsugu; Gotoh, Yasuhito; Ishikawa, Junzo // AIP Conference Proceedings;2006, Vol. 866 Issue 1, p317 

    Germanium nanoparticles in a thin SiO2 film on Si have been formed by negative ion implantation for the development of very low power consumption electron devices using nanoparticles. Their electrical properties of 25-nm-SiO2/Si films including Ge nanoparticles were investigated with CV method...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics