Lifetimes of AMTEC electrodes: Molybdenum, rhodium-tungsten, and titanium nitride

Ryan, M. A.; Shields, V. B.; Cortez, R. H.; Lara, L.; Homer, M. L.; Williams, R. M.
January 2000
AIP Conference Proceedings;2000, Vol. 504 Issue 1, p1377
Academic Journal
The lifetime of three types of AMTEC electrodes is predicted from the rate of grain growth in the electrode. Grain size is related to electrode performance, allowing performance to be correlated with grain growth rate. The rate of growth depends on physical characteristics of each material, including the rates of surface self-diffusion and molecule mobility along grain boundaries. Grain growth rates for molybdenum, rhodium-tungsten and titanium nitride electrodes have been determined experimentally and fit to models in order to predict operating lifetimes of AMTEC electrodes. For lifetimes of 10 years or more, Rh[sub x]W electrodes may be used at any operating temperature supportable by the electrolyte. TiN electrodes may be used in AMTEC cells only at operating temperatures under 1150 K, and Mo may be used only below 1100 K. © 2000 American Institute of Physics.


Related Articles

  • Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes. Min Hyuk Park; Han Joon Kim; Yu Jin Kim; Woongkyu Lee; Taehwan Moon; Keum Do Kim; Cheol Seong Hwang // Applied Physics Letters;8/18/2014, Vol. 105 Issue 7, p1 

    Hf0.5Zr0.5O2 films could show excellent ferroelectricity with a large remanent polarization (Pr, > 16 μC/cm²) on TiN and Ir electrodes, but their Pr decreased with the increasing thickness and monoclinic phase portion. The critical thickness for the degradation of the ferroelectricity of...

  • Tribological Properties of TiN-Cr Electric-Spark Coatings after Solar Treatment. Paustovskii, A.; Frolov, G.; Novikova, V.; Tsyganenko, V.; Mordovets, N.; Kostenko, A. // Materials Science;Jul2005, Vol. 41 Issue 4, p557 

    We show the prospects of using TiN-Cr electrode materials for the formation of wear-resistant electric-spark coatings under the influence of concentrated sunrays, which increase the wear resistance of the coatings two to three times. Electric-spark coating made of 40% TiN and 60% Cr possesses...

  • Physical comparison of HfO2 transistors with polycrystalline silicon and TiN electrodes. Lysaght, P. S.; Foran, B.; Bersuker, G.; Peterson, J. J.; Young, C. D.; Majhi, P.; Lee, B-H.; Huff, H. R. // Applied Physics Letters;8/22/2005, Vol. 87 Issue 8, p082903 

    Transistor gate stack systems consisting of atomic layer deposited HfO2 with polycrystalline silicon or TiN gate electrodes have been characterized by analytical electron microscopy to elucidate underlying physical contributions to electrical performance differences. High-angle annular...

  • Preparation of Non Oxide Ceramics in Thermal Plasma. Singh, S. K. // AIP Conference Proceedings;10/23/2008, Vol. 1063 Issue 1, p183 

    Titanium carbonitride (TiCN) and ultrafine SiC have been prepared in extended arc thermal plasma reactors using graphite electrodes. The prepared materials have been characterized by a variety of analytical methods. It has been possible to produce the materials in a very short time period.

  • Stress induced charge trapping effects in SiO[sub 2]/Al[sub 2]O[sub 3] gate stacks with TiN electrodes. Kerber, A.; Cartier, F.; Groeseneken, G.; Maes, H. F.; Schwalke, U. // Journal of Applied Physics;11/15/2003, Vol. 94 Issue 10, p6627 

    Strong polarity dependent charge trapping effects have been observed in as-deposited SiO[sub 2]/Al[sub 2]O[sub 3] gate stacks with TiN gate electrodes on n- and p-type Si substrates using current–voltage (I–V) and capacitance–voltage (C–V) sensing techniques. For...

  • TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching. Fujimoto, Masayuki; Koyama, Hiroshi; Konagai, Masashi; Hosoi, Yasunari; Ishihara, Kazuya; Ohnishi, Shigeo; Awaya, Nobuyoshi // Applied Physics Letters;11/27/2006, Vol. 89 Issue 22, p223509 

    The surface oxidized layer of a TiN barrier metal thin film grown on a Pt electrode was used as a resistive switching material. The fabricated memory cell shows bipolar resistive switching on a nanosecond order. A TiO2 anatase layer of about 2.5 nm thick on TiN thin film was characterized by...

  • Effect of Sintering Medium on the Structure and Mechanical Properties of Mo – TiN and Mo – ZrN Compositions. Ershova, I. O. // Metal Science & Heat Treatment;Mar/Apr2004, Vol. 46 Issue 3/4, p126 

    The effect of the sintering medium, i.e., hydrogen at different degrees of drying and evacuation, on the mechanical properties of specimens of Mo - TiN and Mo - ZrN powder compositions with 2% nitrides, which are sintered with relative density of 93 - 96%, is investigated. It is shown that...

  • Nanocomposite TiN films with embedded MoS2 inorganic fullerenes produced by combining supersonic cluster beam deposition with cathodic arc reactive evaporation. Piazzoni, C.; Blomqvist, M.; Podestà, A.; Bardizza, G.; Bonati, M.; Piseri, P.; Milani, P.; Davies, C.; Hatto, P.; Ducati, C.; Sedláčková, K.; Radnóczi, G. // Applied Physics A: Materials Science & Processing;Jan2008, Vol. 90 Issue 1, p101 

    We report the production and characterization of nanocomposite thin films consisting of a titanium nitride matrix with embedded molybdenum disulphide fullerene-like nanoparticles. This was achieved by combining a cluster source generating a pulsed supersonic beam of MoS2 clusters with an...

  • Comparative Study On The Impact Of TiN And Mo Metal Gates On MOCVD-Grown HfO2 And ZrO2 High-κ Dielectrics For CMOS Technology. Abermann, S.; Sjoblom, G.; Efavi, J.; Lemme, M.; Olsson, J.; Bertagnolli, E. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p293 

    We compare metal oxide semiconductor capacitors, investigating Titanium-Nitride and Molybdenum as gate materials, as well as metal organic chemical vapor deposited ZrO2 and HfO2 as high-κ dielectrics, respectively. The impact of different annealing steps on the electrical characteristics of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics