TITLE

Processing tungsten single crystal by chemical vapor deposition

AUTHOR(S)
Xiao, Zhigang; Zee, Ralph H.; Begg, Lester L.
PUB. DATE
January 2000
SOURCE
AIP Conference Proceedings;2000, Vol. 504 Issue 1, p1454
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A tungsten single crystal layer has been fabricated on molybdenum single crystal substrate through the hydrogen (H[sub 2]) reduction of the tungsten hexafluoride (WF[sub 6]) in low pressure. Substrate temperature, reaction chamber pressure, and flow rate of WF[sub 6] and H[sub 2], are critical process parameters during deposition. A comprehensive analysis for the effects of these parameters on single crystal layer growth has been processed and optimized growth conditions have been achieved. The different orientation of the substrate shows the different deposition rate for tungsten. Low index plane has higher deposition rate than high index plane. The kinetics of the deposition process has also been investigated. SEM surface analysis indicates that the single crystal layer is smooth in macro-scale and rough and step-growth format in micro-scale. © 2000 American Institute of Physics.
ACCESSION #
5985187

 

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