TITLE

Cryogenic microwave imaging of metal-insulator transition in doped silicon

AUTHOR(S)
Kundhikanjana, Worasom; Lai, Keji; Kelly, Michael A.; Shen, Zhi-Xun
PUB. DATE
March 2011
SOURCE
Review of Scientific Instruments;Mar2011, Vol. 82 Issue 3, p033705
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the instrumentation and experimental results of a cryogenic scanning microwave impedance microscope. The microwave probe and the scanning stage are located inside the variable temperature insert of a helium cryostat. Microwave signals in the distance modulation mode are used for monitoring the tip-sample distance and adjusting the phase of the two output channels. The ability to spatially resolve the metal-insulator transition in a doped silicon sample is demonstrated. The data agree with a semiquantitative finite element simulation. Effects of the thermal energy and electric fields on local charge carriers can be seen in the images taken at different temperatures and dc biases.
ACCESSION #
59744554

 

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