TITLE

Low Stokes shift in thick and homogeneous InGaN epilayers

AUTHOR(S)
Srinivasan, S.; Bertram, F.; Bell, A.; Ponce, F. A.; Tanaka, S.; Omiya, H.; Nakagawa, Y.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p550
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The optical properties of thick In[sub x]Ga[sub 1-x]N layers have been studied using optical absorption and cathodoluminescence techniques. The indium composition x of the layers ranged from 0.03 to 0.17 as determined by Rutherford backscattering measurements. The difference between the band gap and the peak emission energy (Stokes shift) was found to be considerably smaller than reported in the past for these alloys. Monochromatic images show that light emission from most of the film is homogeneous and is associated with a low Stokes shift. A second emission band at longer wavelengths is observed for x>=0.08. This band originates from indium-rich regions in the vicinity of extended defects, and exhibits a larger Stokes shift. Our observations indicate that it is possible to grow InGaN epilayers with high indium composition, high homogeneity, and lower Stokes shift. © 2002 American Institute of Physics.
ACCESSION #
5942549

 

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