Metal–insulator transition of VO[sub 2] thin films grown on TiO[sub 2] (001) and (110) substrates

Muraoka, Y.; Hiroi, Z.
January 2002
Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p583
Academic Journal
The effect of uniaxial stress along the c axis on the metal–insulator transition of VO[sub 2] has been studied in the form of epitaxial thin films grown on TiO[sub 2] (001) and (110) substrates. A large reduction in the transition temperature T[sub MI] from 341 K for a single crystal to 300 K has been observed in the film on TiO[sub 2] (001) where the c-axis length is compressed owing to an epitaxial stress, while the T[sub MI] has been increased to 369 K in the film on TiO[sub 2] (110) where the c-axis length is expanded. The correlation between the c-axis length and T[sub MI] is suggested: the shorter c-axis length results in the lower T[sub MI]. © 2002 American Institute of Physics.


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