TITLE

Sputtering of Si with decaborane cluster ions

AUTHOR(S)
Sosnowski, Marek; Albano, Maria A.; Li, Cheng; Gossmann, Hans-Joachim L.; Jacobson, Dale C.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p592
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Decaborane cluster ions (B[sub 10]H[sub x][SUP ARRANGE="STAGGER"]+]) may play an important role in the manufacturing of future semiconductor devices, as they facilitate a very shallow implantation of B with a relatively high beam energy, due to its partition among the constituent atoms. While the formation of B-doped shallow junctions in Si has been demonstrated, little is known about other effects of these complex ions on a solid. We have measured the sputtering yield of Si with decaborane cluster ions at 12 keV and demonstrated that their impacts smooth rather than roughen the surface, similarly to much larger Ar cluster ions. The results have implications for the understanding of low-energy atomic impacts in terms of collective motion of many surface atoms and of the behavior of solids far from equilibrium. © 2002 American Institute of Physics.
ACCESSION #
5942534

 

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