TITLE

Influence of [sup 60]Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

AUTHOR(S)
Luo, B.; Johnson, J. W.; Ren, F.; Allums, K. K.; Abernathy, C. R.; Pearton, S. J.; Dabiran, A. M.; Wowchack, A. M.; Polley, C. J.; Chow, P. P.; Schoenfeld, D.; Baca, A. G.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p604
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
AlGaN/GaN high electron mobility transistors (HEMTs) with different gate length and widths were irradiated with [sup 60]Co γ-rays to doses up to 600 Mrad. Little measurable change in dc performance of the devices was observed for doses lower than 300 Mrad. At the maximum dose employed, the forward gate current was significantly decreased, with an accompanying increase in reverse breakdown voltage. This is consistent with a decrease in effective carrier density in the channel as a result of the introduction of deep electron trapping states. The threshold voltage shifted to more negative voltages as a result of the irradiation, while the magnitude of the drain–source current was relatively unaffected. This is consistent with a strong increase of trap density in the material. The magnitude of the decrease in transconductance of the AlGaN/GaN HEMTs is roughly comparable to the decrease in dc current gain observed in InGaP/GaAs heterojunction bipolar transistors irradiated under similar conditions. © 2002 American Institute of Physics.
ACCESSION #
5942530

 

Related Articles

  • Influence of AlGaN and InGaN Back Barriers on the Performance of AlGaN/GaN HEMT. Singh, Shreyash Pratap; Chaturvedi, Nidhi // IETE Technical Review;Feb2016, Vol. 33 Issue 1, p40 

    This paper does a comparative analysis of the effect of AlGaN and InGaN back barriers on the current and breakdown voltage characteristics of Al0.25Ga0.75N/GaN high electron mobility transistors (HEMTs) grown on sapphire substrates. Compared with the conventional GaN HEMTs, the introduction of a...

  • Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment. Ronghui Hao; Kai Fu; Guohao Yu; Weiyi Li; Jie Yuan; Liang Song; Zhili Zhang; Shichuang Sun; Xiajun Li; Yong Cai; Xinping Zhang; Baoshun Zhang // Applied Physics Letters;10/10/2016, Vol. 109 Issue 15, p152106-1 

    In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release...

  • Electrical characteristics of proton-irradiated Sc[sub 2]O[sub 3] passivated AlGaN/GaN high electron mobility transistors. Luo, B.; Kim, Jihyun; Ren, F.; Gillespie, J. K.; Fitch, R. C.; Sewell, J.; Dettmer, R.; Via, G. D.; Crespo, A.; Jenkins, T. J.; Gila, B. P.; Onstine, A. H.; Allums, K. K.; Abernathy, C. R.; Pearton, S. J.; Dwivedi, R.; Fogarty, T. N.; Wilkins, R. // Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1428 

    Sc[sub 2]O[sub 3]-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10 years in low-earth orbit (5 × 10[sup 9] cm[sup -2]). Devices with an AlGaN cap layer showed less degradation in dc...

  • Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors. Chao Liu; Yuefei Cai; Zhaojun Liu; Jun Ma; Kei May Lau // Applied Physics Letters;5/4/2015, Vol. 106 Issue 18, p1 

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose...

  • Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors. Rousseau, M.; Soltani, A.; De Jaeger, J. C. // Applied Physics Letters;9/17/2012, Vol. 101 Issue 12, p122101 

    This letter describes the thermal behavior of AlGaN/GaN high electron mobility transistors on different substrates thanks to a fully consistent physical-thermal model. Self-heating explains the drastic reduction in the current flowing from drain to source. It is shown that, in order to keep the...

  • Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristics. Agboton, Alain; Defrance, Nicolas; Altuntas, Philippe; Lecourt, François; Douvry, Yannick; Hoel, Virginie; Soltani, Ali; De Jaeger, Jean-Claude // European Physical Journal - Applied Physics;Nov2013, Vol. 64 Issue 2, p00 

    This paper reports on the temperature dependent threshold voltage analysis of AlGaN/GaN High electron mobility transistors (HEMTs) in order to investigate the trap effects occurring in these devices. Measurements are performed in pulse configuration to emphasize the gate-lag and drain-lag...

  • High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor. Sun, J. D.; Sun, Y. F.; Wu, D. M.; Cai, Y.; Qin, H.; Zhang, B. S. // Applied Physics Letters;1/2/2012, Vol. 100 Issue 1, p013506 

    Using only optical lithography, we have fabricated a GaN/AlGaN high-electron mobility transistor with distinctive source and drain antennas electrically isolated from the electron channel. Working at room temperature, it efficiently detects terahertz radiation via self-mixing, with a...

  • Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization. Sung Park, Pil; Nath, Digbijoy N.; Krishnamoorthy, Sriram; Rajan, Siddharth // Applied Physics Letters;2/6/2012, Vol. 100 Issue 6, p063507 

    We propose and demonstrate a two dimensional/three dimensional hybrid channel AlGaN/GaN high electron mobility transistor (HEMT) structure with a flat transconductance profile using polarization-induced channel engineering. A quasi three dimensional electron gas profile with 5-6 nm of vertical...

  • Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection. Thapa, Resham; Alur, Siddharth; Kim, Kyusang; Tong, Fei; Sharma, Yogesh; Kim, Moonil; Ahyi, Claude; Dai, Jing; Wook Hong, Jong; Bozack, Michael; Williams, John; Son, Ahjeong; Dabiran, Amir; Park, Minseo // Applied Physics Letters;6/4/2012, Vol. 100 Issue 23, p232109 

    Label-free electrical detection of deoxyribonucleic acid (DNA) hybridization was demonstrated using an AlGaN/GaN high electron mobility transistor (HEMT) based transducer with a biofunctionalized gate. The HEMT DNA sensor employed the immobilization of amine-modified single strand DNA on the...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics