Amorphous silicon thin-film transistors and arrays fabricated by jet printing

Wong, W. S.; Ready, S.; Matusiak, R.; White, S. D.; Lu, J.-P.; Ho, J.; Street, R. A.
January 2002
Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p610
Academic Journal
Phase-change wax-based printed masks, in place of conventional photolithography, were used to fabricate hydrogenated amorphous silicon thin-film transistors (TFTs). Wax-mask features with a minimum feature size of ∼20 μm were achieved using an acoustic-ink-printing process. Both discrete and matrix addressing structured bottom-gate TFTs with source–drain contacts overlapping the channel were created using a four-mask process. The TFTs had current–voltage characteristics comparable to photolithographically patterned devices, with mobility of 0.6–0.9 cm2/V s, threshold voltage of 2–3 V, and on/off ratios exceeding 10[sup 7] for devices with channel lengths below 50 μm. © 2002 American Institute of Physics.


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