Epitaxial growth and valence control of strained perovskite SrFeO[sub 3] films

Yamada, Hiroyuki; Kawasaki, M.; Tokura, Y.
January 2002
Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p622
Academic Journal
We have fabricated single-crystalline thin films of perovskite-type iron oxide SrFeO[sub 3] which include high valent iron (Fe[sup 4+]). The fabrication is accomplished on the lattice-mismatched substrates of SrTiO[sub 3] [(STO), 1.4% tensile strain] and (LaAlO[sub 3])[sub 0.3](SrAl[sub 0.5]Ta[sub 0.5]O[sub 3])[sub 0.7] [(LSAT), 0.5% tensile strain] by pulsed-laser deposition of SrFeO[sub 2.5] with Fe[sup 3+] state and subsequent annealing in ozone. The SrFeO[sub 2.5] films are grown in a layer-by-layer mode, exhibiting atomically smooth surfaces. The ozone annealed films on LSAT show metallic conductivity as observed in bulk SrFeO[sub 3], whereas those on STO remain semiconducting due to large tensile strain. A pseudomorphically strained epitaxial structure can be maintained by the proper choice of substrates and growth conditions through the huge volume change accompanied by the valence change from Fe[sup 3+] to Fe[sup 4+]. © 2002 American Institute of Physics.


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