Surface-emitting spin-polarized In[sub 0.4]Ga[sub 0.6]As/GaAs quantum-dot light-emitting diode

Ghosh, S.; Bhattacharya, P.
January 2002
Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p658
Academic Journal
We report the properties of a spin-polarized In[sub 0.4]Ga[sub 0.6]As/GaAs quantum-dot surface-light-emitting diode with a Ga[sub 0.974]Mn[sub 0.026]As spin injector layer. Spin-polarized holes from this ferromagnetic layer recombine with electrons in the quantum dots to produce circularly polarized light output. The peak optical polarization efficiency at 5.1 K is 18% and the spin injection efficiency is estimated to be ∼36%. The temperature dependence of spin injection is almost identical to the temperature dependence of magnetization in the (Ga, Mn)As layer. © 2002 American Institute of Physics.


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