Single-electron tunneling effects in a metallic double dot device

Junno, T.; Carlsson, S. -B.; Xu, H. Q.; Samuelson, L.; Orlov, A. O.; Snider, G. L.
January 2002
Applied Physics Letters;1/28/2002, Vol. 80 Issue 4, p667
Academic Journal
We report on differential conductance measurements on a gold double-dot structure at 4.2 K. The two dots were connected in series by tunnel junctions formed by atomic force microscopy manipulation of nanodisks. The tunnel junctions were made strongly asymmetric. The characteristic honeycomb-shaped charging diagram separating different Coulomb blockade regions of well-defined occupancy of electrons was observed and the cells in the charging diagram were found to be skewed by the asymmetry of the tunnel junctions. In addition, a double-dot Coulomb staircase structure, with steps of varying width, was observed and was studied for varying gate voltage. The occupancy of electrons on the two dots was determined as a function of both drain source and gate voltages. © 2002 American Institute of Physics.


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