TITLE

Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions

AUTHOR(S)
Khalili Amiri, P.; Zeng, Z. M.; Langer, J.; Zhao, H.; Rowlands, G.; Chen, Y.-J.; Krivorotov, I. N.; Wang, J.-P.; Jiang, H. W.; Katine, J. A.; Huai, Y.; Galatsis, K.; Wang, K. L.
PUB. DATE
March 2011
SOURCE
Applied Physics Letters;3/14/2011, Vol. 98 Issue 11, p112507
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present in-plane CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current. The tunneling magnetoresistance ratio, resistance-area product, and switching current densities are compared in magnetic tunnel junctions with different CoFeB compositions. The effects of CoFeB free layer thickness on its magnetic anisotropy and current-induced switching characteristics are studied by vibrating sample magnetometry and electrical transport measurements on patterned elliptical nanopillar devices. Switching current densities ∼4 MA/cm2 are obtained at 10 ns write times.
ACCESSION #
59404932

 

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