Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions

Khalili Amiri, P.; Zeng, Z. M.; Langer, J.; Zhao, H.; Rowlands, G.; Chen, Y.-J.; Krivorotov, I. N.; Wang, J.-P.; Jiang, H. W.; Katine, J. A.; Huai, Y.; Galatsis, K.; Wang, K. L.
March 2011
Applied Physics Letters;3/14/2011, Vol. 98 Issue 11, p112507
Academic Journal
We present in-plane CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current. The tunneling magnetoresistance ratio, resistance-area product, and switching current densities are compared in magnetic tunnel junctions with different CoFeB compositions. The effects of CoFeB free layer thickness on its magnetic anisotropy and current-induced switching characteristics are studied by vibrating sample magnetometry and electrical transport measurements on patterned elliptical nanopillar devices. Switching current densities ∼4 MA/cm2 are obtained at 10 ns write times.


Related Articles

  • Spin torque switching of perpendicular Ta|CoFeB|MgO-based magnetic tunnel junctions. Worledge, D. C.; Hu, G.; Abraham, David W.; Sun, J. Z.; Trouilloud, P. L.; Nowak, J.; Brown, S.; Gaidis, M. C.; O'Sullivan, E. J.; Robertazzi, R. P. // Applied Physics Letters;1/10/2011, Vol. 98 Issue 2, p022501 

    Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta|CoFeB|MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta|CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for...

  • Effect of interlayer coupling in CoFeB/Ta/NiFe free layers on the critical switching current of MgO-based magnetic tunnel junctions. Lee, Kangho; Chen, Wei-Chuan; Zhu, Xiaochun; Li, Xia; Kang, Seung H. // Journal of Applied Physics;Jul2009, Vol. 106 Issue 2, p024513 

    This paper reports the current-induced magnetization reversal characteristics of MgO-based magnetic tunnel junctions (MTJs) with CoFeB/Ta/NiFe composite free layers designed for spin-transfer-torque magnetoresistive random access memory. As the Ta spacer thickness (≤8 Å) was increased,...

  • Magnetostructural influences of thin Mg insert layers in crystalline CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions. Hindmarch, A. T.; Harnchana, V.; Ciudad, D.; Negusse, E.; Arena, D. A.; Brown, A. P.; Brydson, R. M. D.; Marrows, C. H. // Applied Physics Letters;12/20/2010, Vol. 97 Issue 25, p252502 

    It is common to find a thin (∼0.5 nm) layer of Mg deposited prior to the MgO tunnel barrier in crystalline CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions, due to the improved device performance that results. However, despite their common usage, the reasons why such layers are effective are...

  • Fully epitaxial (Zn,Co)O/ZnO/(Zn,Co)O junction and its tunnel magnetoresistance. Song, C.; Liu, X. J.; Zeng, F.; Pan, F. // Applied Physics Letters;7/23/2007, Vol. 91 Issue 4, p042106 

    The authors report tunnel magnetoresistance (TMR) and its bias dependence in fully epitaxial (Zn,Co)O/ZnO/(Zn,Co)O magnetic tunnel junctions. A positive TMR of 20.8% is obtained at 4 K, which can resist up to room temperature with the TMR ratio of 0.35% at 2 T, due to improved crystallinity of...

  • Magnetic noise evolution in CoFeB/MgO/CoFeB tunnel junctions during annealing. Stearrett, Ryan; Wang, W. G.; Shah, L. R.; Xiao, J. Q.; Nowak, E. R. // Applied Physics Letters;12/13/2010, Vol. 97 Issue 24, p243502 

    We report on the evolution of equilibrium magnetoresistive (MR) 1/f noise due to the exchange-biased magnetic layer in MgO-based magnetic tunnel junctions as a function of annealing time at 380 and 430 °C. The resistance susceptibility and MR noise are observed to increase rapidly with...

  • Magnetoresistance of spin-dependent tunnel junctions with composite electrodes. Ho, C. H.; Lin, Minn-Tsong; Yao, Y. D.; Lee, S. F.; Liao, C. C.; Chen, F. R.; Kai, J. J. // Journal of Applied Physics;12/15/2001, Vol. 90 Issue 12, p6222 

    Spin-dependent tunnel junctions, Co/Al[sub 2]O[sub 3]/Co (CoFe)/NiFe, were fabricated to investigate the effect of the additional Co (CoFe) interlayer on tunneling magnetoresistance. The quality of the junction was examined with a cross-sectional image generated by high-resolution transmission...

  • Thermally stable exchange-biased magnetic tunnel junctions over 400 °C. Matsukawa, Nozomu; Odagawa, Akihiro; Sugita, Yasunari; Kawashima, Yoshio; Morinaga, Yasunori; Satomi, Mitsuo; Hiramoto, Masayoshi; Kuwata, Jun // Applied Physics Letters;12/16/2002, Vol. 81 Issue 25, p4784 

    Exchange-biased magnetic tunnel junctions (MTJs) with interposed Fe[sub 1 - x]Pt[sub x] metal alloy layers between the Al oxide barrier and the ferromagnetic electrodes maintain large tunneling magnetoresistance (TMR) after thermal treatment in excess of 400 °C, owing to an improved barrier...

  • Current induced exchange switching of magnetic junctions with cubic anisotropy of a free layer. Gulyaev, Yu.; Zil'berman, P.; Chigarev, S.; Epshtein, E. // Physics of the Solid State;Apr2011, Vol. 53 Issue 4, p723 

    The stability of equilibrium configurations of magnetic junctions with a free layer of cubic anisotropy with two axes in the layer plane has been analyzed. Variants of switching between different configurations have been considered. It has been demonstrated that the possibility exists of...

  • Abnormal bias dependence of magnetoresistance in CoFeB/MgO/Si spin-injection tunnel contacts. June-Young Park; Seung-heon Chris Baek; Seung-Young Park; Younghun Jo; Byong-Guk Park // Applied Physics Letters;11/2/2015, Vol. 107 Issue 18, p1 

    We report a strong bias voltage dependence of magnetoresistance (MR) in CoFeB/MgO/Si spin-injection tunnel contacts using the three-terminal Hanle geometry. When a bias voltage is relatively large, the MR is composed of two characteristic signals: a conventional Hanle signal observed at a low...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics