TITLE

Ablation of SiN Passivation Layers on Photovoltaic Cells with Femtosecond Laser Source

AUTHOR(S)
Stolberg, K.; Friedel, S.; Kremser, B.; Leitner, M.; Atsuta, Y.
PUB. DATE
June 2010
SOURCE
Journal of Laser Micro / Nanoengineering;2010, Vol. 5 Issue 2, p125
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This paper presents results of high-speed selective laser ablation of Silicon Nitride (SiN) coatings, which are used as antireflection and passivation layer at monocrystalline and multicrystalline silicon wafers for solar cells. We discuss ablation mechanism of NIR femtosecond laser pulses and advantages for cold ablation with minimised lattice damage. We show practical results of single-shot ablation with a repetition rate of 100 kHz. Finally we compare layer ablation with NIR pico-second laser.
ACCESSION #
59309150

 

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