TITLE

Growth-temperature dependence of Er-doped GaN luminescent thin films

AUTHOR(S)
Lee, D. S.; Heikenfeld, J.; Steckl, A. J.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p344
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Visible photoluminescence (PL) and electroluminescence (EL) emission has been observed from Er-doped GaN thin films grown on (111) Si at various temperatures from 100 to 750 °C in a radio-frequency plasma molecular beam epitaxy system. PL and EL intensities of green emission at 537 nm from GaN:Er films exhibited strong dependence on the growth temperature, with a maximum at 600 °C. Scanning electron and atomic force microscopy showed smooth surfaces at 600 °C and rough surfaces at 100 and 750 °C. X-ray diffraction indicated that the GaN:Er film structure was oriented with the c axis perpendicular to the substrate for all growth temperatures. The crystalline quality initially improves with an increase in growth temperature, and saturates at ∼500 °C. Considering both the luminescence and structural properties of the film, ∼600 °C seems to be the optimal temperature for growth of Er-doped GaN luminescent films on Si substrates. © 2002 American Institute of Physics.
ACCESSION #
5884272

 

Related Articles

  • Electroluminescence and photoluminescence in sputtered ZnS:TbFx thin films. Okamoto, Kenji; Watanabe, Kazuhiro // Applied Physics Letters;9/8/1986, Vol. 49 Issue 10, p578 

    A study has been made on the electroluminescence (EL) and photoluminescence (PL) spectra of sputtered ZnS:TbFx thin films. The brightness and EL spectra are strongly dependent on x. The highest brightness has been obtained at x=1. From a comparison of EL and PL of standard samples, we conclude...

  • Green electroluminescence from a Tb-doped AlN thin-film device on Si. Lu, F.; Carius, R.; Alam, A.; Heuken, M.; Buchal, Ch. // Journal of Applied Physics;9/1/2002, Vol. 92 Issue 5, p2457 

    Green photoluminescence and electroluminescence (EL) from Tb implanted A1N films have been observed at room temperature. The AlN films of 180 nm thickness were grown on n-type Si(111) by metalorganic chemical vapor deposition. X-ray diffraction shows that the AlN is polycrystalline. The A1N...

  • Thermally stimulated luminescence of SrS:Cu thin films. Morton, D. C.; Forsythe, E. W.; Sun, S.-S.; Wood, M. C.; Ervin, M. H.; Kirchner, K. // Applied Physics Letters;3/5/2001, Vol. 78 Issue 10, p1400 

    SrS:Cu thin films were evaluated using thermally stimulated luminescence (TSL), photoluminescence (PL), electroluminescence (EL), and charge transfer over a temperature range of 10-850 K. The trap states were measured with and without a BaTa[sub 2]O[sub 6] (BTO) overlayer film. From TSL results,...

  • Relation between electroluminescence and photoluminescence of Si+-implanted SiO2. Hai-Zhi Song; Xi-Mao Bao; Ning-Sheng Li; Jia-Yu Zhang // Journal of Applied Physics;10/15/1997, Vol. 82 Issue 8, p4028 

    Compares the electroluminescence (EL) from Si+ implanted SiO2 thin film prepared by thermal oxidation with photoluminescence (PL) properties. Effective way to fabricate Si based visible light emitting materials; Enhancement of mechanical and thermal stability of materials; Mechanism of PL;...

  • Doped thin films of two organic molecules for light-emitting diodes. Giovanella, Umberto; Botta, Chiara; Pasini, Mariacecilia; Porzio, William; Destri, Silvia // Applied Physics Letters;11/24/2003, Vol. 83 Issue 21, p4318 

    The photoluminescence and electroluminescence of doped organic materials are reported for thin films prepared by ultrahigh-vacuum coevaporation and by spin coating from solution of two emitting molecules. For both films, efficient energy transfer from the donor to the acceptor molecules is...

  • Photo- and electroluminescence of SrS:Cu and SrS: Ag, Cu, Ga thin films. Li, Wei-Min; Ritala, Mikko // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p5017 

    Presents information on a study which examined the photoluminescence and electroluminescence of blue and green strontium-sulfur:silver, copper, gallium thin films using atomic layer epitaxy and molecular beam epitaxy. Experimental details; Results and discussion; Conclusions.

  • Excitation mechanism in thin-film electroluminescent devices. Okamoto, Kenji; Miura, Shoshin // Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1596 

    Time-resolved emission spectra of ZnS:TbF thin films in photoluminescence and electroluminescence were measured and compared within a relatively short delay. It was concluded that the excitation mechanism of the Tb center involves energy transfer from the ZnS host in which the Tb-related center...

  • Red light emission by photoluminescence and electroluminescence from Eu-doped GaN. Heikenfeld, J.; Garter, M.; Lee, D.S.; Birkhahn, R.; Steckl, A.J. // Applied Physics Letters;8/30/1999, Vol. 75 Issue 9, p1189 

    Obtains red light emission at room temperature by photoluminescence and electroluminescence from europium (Eu)-doped gallium nitride (GaN) thin films. Growth of the GaN by molecular beam epitaxy on silicon substrates using solid sources and a plasma source; X-ray diffraction findings that the...

  • Electro- and photo-luminescent quenching effects imposed by field-induced ionization of the Eu2+ luminescent centers in CaS:Eu thin films. Ando, M.; Ono, Y. A. // Journal of Applied Physics;5/15/1991, Vol. 69 Issue 10, p7225 

    Presents information on a study which measured the high-field electroluminescent and photoluminescent intensities of calcium sulphide: Euporium thin films that were quenched by an applied electric field. Methodology of the study; Results and discussion; Conclusions.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics