Two-photon-excited green emission and its dichroic shift of oriented thin-film CdS on glass formed by laser deposition

Ullrich, B.; Schroeder, R.; Sakai, H.; Zhang, A.; Cheng, S. Z. D.
January 2002
Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p356
Academic Journal
The photoluminescence of oriented thin-film CdS on glass formed by laser deposition was investigated employing 200 fs, 1.54 eV laser pulses at room temperature. The ultrafast excitation caused a two-photon absorption process, which results in purely green emission at the band gap. The spectra are fitted very well by the application of the van Roosbroeck–Shockley relation, density of states, and Urbach’s rule demonstrating the intrinsic character of the radiative recombination. It is further shown that the energy position of the emission peak depends on the polarization of the impinging laser beam due to the dichroism of the highly oriented films. © 2002 American Institute of Physics.


Related Articles

  • Optical and structural properties of epitaxial Mg[sub x]Zn[sub 1-x]O alloys. Sharma, A.K.; Narayan, J.; Muth, J.F.; Teng, C.W.; Jin, C.; Kvit, A.; Kolbas, R.M.; Holland, O.W. // Applied Physics Letters;11/22/1999, Vol. 75 Issue 21, p3327 

    Studies the optical and structural properties of single-crystal epitaxial MgZnO thin films deposited by pulsed laser deposition. Ultraviolet band edge photoluminescence at room temperature and 77 K; Post-deposition annealing in oxygen; Potential applications in various optoelectronic devices.

  • Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition. Mah, K. W.; Mosnier, J.-P.; McGlynn, E.; Henry, M. O.; O’Mahony, D.; Lunney, J. G. // Applied Physics Letters;5/6/2002, Vol. 80 Issue 18, p3301 

    Epitaxial GaN films of thickness ∼1 µm have been grown on sapphire(0001) and GaAs(001) substrates using the liquid-target pulsed-laser-deposition technique in a 5 Tort nitrogen atmosphere. Detailed x-ray diffraction and photoluminescence studies were carried out for both types of...

  • Photoluminescence performance of pulsed-laser deposited Al[sub 2]O[sub 3] thin films with large erbium concentrations. Serna, R.; Jime´nez de Castro, M.; Chaos, J. A.; Sua´rez-Garcia, A.; Afonso, C. N.; Ferna´ndez, M.; Vickridge, I. // Journal of Applied Physics;11/15/2001, Vol. 90 Issue 10, p5120 

    Erbium doped Al[sub 2]O[sub 3] films with concentrations up to 6×10[sup 20] Er cm[sup -3] have been prepared in a single step process by pulsed-laser deposition. Alternate ablation of Al[sub 2]O[sub 3] and Er targets has been used to control the in-depth distribution and in-plane...

  • Photoluminescence of Nd-doped LiNbO[sub 3] films prepared by pulsed laser deposition. Alfonso, J.E.; Martin, M.J. // Applied Physics Letters;11/17/1997, Vol. 71 Issue 20, p2904 

    Examines the photoluminescence of neodymium-doped LiNbo[sub 3] films prepared by pulsed laser deposition. Enhancement of crystallinity through postdeposition thermal treatments; Result of preferential nucleation of lithium deficient phases; Discussion on the possible origin of the...

  • Improved photoluminescence of pulsed-laser-ablated Y[sub 2]O[sub 3]:Eu[sup 3+] thin-film phosphors by Gd substitution. Bae, Jong Seong; Jeong, Jung Hyun; Yi, Soung-soo; Park, Jung-Chul // Applied Physics Letters;5/26/2003, Vol. 82 Issue 21, p3629 

    Gd-substituted Y[sub 2-x]Gd[sub x]O[sub 3]:Eu[sup 3+] luminescent thin films have been grown on Al[sub 2]O[sub 3] (0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The...

  • 1.54 μm photoluminescence emission and oxygen vacancy as sensitizer in Er-doped HfO2 films. Wang, Junzhuan; Xia, Yan; Shi, Yi; Shi, Zhuoqiong; Pu, Lin; Zhang, Rong; Zheng, Youdou; Tao, Zhensheng; Lu, Fang // Applied Physics Letters;11/5/2007, Vol. 91 Issue 19, p191115 

    In this letter, we report on the characteristics of 1.54 μm photoluminescence emission of Er-doped HfO2 films synthesized by pulsed laser deposition and ion implantation. An efficient emission at 1.54 μm in the annealed HfO2 films has been observed under a broad band excitation from 400 nm...

  • Luminescence of pulsed laser deposited Gd[sub 2]O[sub 3]:Eu[sup 3+] thin film phosphors on quartz glass substrates. Seo, Soo Yeon; Lee, Seonghoon; Park, Hee Dong; Shin, Namsoo; Sohn, Kee-Sun // Journal of Applied Physics;11/1/2002, Vol. 92 Issue 9, p5248 

    Thin film phosphors of Gd[SUB2]O[SUB3]:Eu[SUP3+] were deposited on quartz glass plates by pulsed laser deposition and compared with typically used thin film phosphors composed of Y[SUB2]O[SUB3]:Eu[SUP3+] in terms of cathodoluminescence (CL) and photoluminescence (PL). Both the CL and PL of...

  • Enhancement of photoluminescence in Ge nanoparticles by neighboring amorphous C in composite Ge/C thin films. Zhu, Y.; Yuan, C. L.; Ong, P. P. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p6029 

    Composite thin films of Ge and C prepared with the pulsed laser deposition method were found to exhibit enhancement of photoluminescence (PL). X-ray diffractometry and atomic force microscopy established that the structure of the as-prepared sample consisted of Ge nanocrystals and amorphous C. A...

  • Pulsed laser deposition of silicate phosphor thin films. Sun, X.W.; Kwok, H.S. // Applied Physics A: Materials Science & Processing;1999, Vol. 69 Issue 7, pS39 

    Abstract. Three types of silicate phosphor thin films, emitting in the red-green-blue (RGB) primary colors, were fabricated by pulsed laser deposition, including manganese and lead doped calcium silicate (CaSiO[sub 3]:MnPb) for red color, manganese doped zinc silicate (Zn[sub 2]SiO[sub 4]:Mn)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics