TITLE

Effect of annealing of polythiophene derivative for polymer light-emitting diodes

AUTHOR(S)
Ahn, Taekyung; Lee, Haiwon; Han, Sien-Ho
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p392
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The nature of the interface between the light-emitting layer and the metal electrode is of importance in determining device performance. The heat treatment of the electroluminescence device can enhance the adhesion of the polymer on the electrode by reducing free volume or pores in the interface. The current–voltage–luminance characteristic of the device with heat treatment at various temperatures was investigated. The annealed device above glass transition temperature (T[sub g]) showed the most efficient characteristics. The current density was increased about 20 times over that of the unannealed device. The light intensity was also increased dramatically by 40 times. © 2002 American Institute of Physics.
ACCESSION #
5884256

 

Related Articles

  • Thermal control of near-infrared and visible electroluminescence in alkyl-phenyl substituted.... Berggren, M.; Gustafsson, G. // Applied Physics Letters;9/19/1994, Vol. 65 Issue 12, p1489 

    Examines the electroluminescence of alkyl-phenyl substituted polythiophene. Advantages of polymeric electroluminescent devices over inorganic materials; Characteristics of low-bandgap form and high-bandgap form polymer films; Analysis on thermally treated polymer light emitting diodes.

  • Effect of Vacuum Annealing on the Edge Luminescence of Undoped Zinc Selenide. Makhni&ibreve;, V. P.; Sletov, A. M.; Tkachenko, I. V. // Semiconductors;Sep2004, Vol. 38 Issue 9, p996 

    It has been established experimentally that vacuum annealing of undoped ZnSe crystals in the temperature range 700–1200 K leads to a significant increase in the intensity of the blue luminescence band and suppression of the red-orange band. A model for defect formation is proposed to...

  • Complete suppression of surface leakage currents in microperforated blue light-emitting diodes. Yang, Y.; Cao, X. A. // Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p011109 

    We investigated the effects of thermal annealing and sulfide passivation on the electrical characteristics of GaN-based light-emitting diodes (LEDs) whose active regions were integrated with a plasma-etched microhole array resembling a photonic crystal structure. Thermal annealing removed most...

  • EBIC study of nonradiative recombination in silicon LEDs with near-band-edge luminescence. Yakimov, E. B.; Sobolev, N. A. // Semiconductors;Sep2010, Vol. 44 Issue 9, p1241 

    Silicon light-emitting diode structures with a near-band-edge luminescence have been studied by the EBIC method. The structures were fabricated by ion implantation with different temperatures of the final stage of the postimplantation annealing (950 and 1000°C). Upon raising the annealing...

  • Lifetime of organic light emitting diodes on polymer anodes. Fehse, Karsten; Meerheim, Rico; Walzer, Karsten; Leo, Karl; Lövenich, Wilfried; Elschner, Andreas // Applied Physics Letters;8/25/2008, Vol. 93 Issue 8, p083303 

    We report on the use of a thin layer of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) as anode for bottom emission organic light emitting diodes (OLEDs). The combination of polymer anodes with OLEDs having either electrically doped or undoped hole transport layers in direct...

  • Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes. Wang, Liancheng; Zhang, Yiyun; Li, Xiao; Liu, Zhiqiang; Guo, Enqing; Yi, Xiaoyan; Wang, Junxi; Zhu, Hongwei; Wang, Guohong // Applied Physics Letters;8/6/2012, Vol. 101 Issue 6, p061102 

    InGaN-based vertical structure light emitting diodes (VLEDs) with multi-layer graphene transparent electrodes with higher optical output have been fabricated and tested. High temperature annealing introduced inter-diffusion of metal atoms and Ga atoms and generated the partially sandwiched...

  • Optimization of dressed-photon-phonon-assisted annealing for fabricating GaP light-emitting diodes. Kim, Jun; Kawazoe, Tadashi; Ohtsu, Motoichi // Applied Physics A: Materials Science & Processing;Dec2015, Vol. 121 Issue 4, p1395 

    Using the two-level two-state model, we analyzed the characteristics of enhanced electroluminescence intensity from a GaP LED fabricated by dressed-photon-phonon-assisted annealing. In this model, we utilized the fact that the adiabatic potential barrier of the electronic excited level in...

  • NOWE KSIÄ„Å»KI. Spychaj, Stanisława // Polimery;2012, Vol. 57 Issue 11/12, p892 

    No abstract available.

  • The effect of post-growth annealing on the colour properties of n-ZnO nanorods/p-GaN white LEDs. Alvi, N. H.; ul Hasan, K.; Nur, O.; Willander, M. // Lighting Research & Technology;Sep2011, Vol. 43 Issue 3, p331 

    The effect of post-growth annealing on the colour properties of the light emitted by n-ZnO nanorods/p-GaN white LEDs has been investigated. The as-grown ZnO nanorods were annealed in nitrogen, oxygen, argon and air atmospheres at 600°C for 30 minutes. The colour rendering indices and...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics