Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO[sub 2]

Ghosh, Sandip; Waltereit, P.; Brandt, O.; Grahn, H. T.; Ploog, K. H.
January 2002
Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p413
Academic Journal
We investigate the polarization dependence of the absorption, reflectance, and photoreflectance spectra of a compressively strained, M-plane, wurtzite GaN(11¯00) film grown by molecular-beam epitaxy on a γ-LiAlO[sub 2](100) substrate. The measurements are done with the electric-field vector (E) of the probe light being parallel (||) and perpendicular (⊥) to the c axis of GaN, which lies in the growth plane. We observe a significant increase in the effective optical band gap of the M-plane GaN film for E||c compared to its value for E⊥c. This result is explained by including the effect of the M-plane biaxial compressive strain on the electronic band structure of GaN. We also determine the extraordinary refractive index of GaN at energies below its band gap from the reflectance measurements. © 2002 American Institute of Physics.


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