TITLE

Rapid thermal low-pressure metal organic chemical vapor deposition of Fe-doped InP layers

AUTHOR(S)
Kreinin, O.; Bahir, G.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p422
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High quality Fe-doped InP layers have been grown by means of rapid thermal low-pressure metal organic chemical vapor deposition. Trimethylindium, tertiarybutylphosphine, and ferrocene were used as indium, phosphorus, and iron sources, respectively. The best growth conditions are: V–III ratio of 100 temperature of 650 °C, pressure of 4 Torr and growth rate of 2 μm/h. Featureless films were grown with a flat iron concentration of 2×10[sup 18] cm[sup -3] as a function of depth, with an average specific resistivity of 10[sup 8] Ω cm and a narrow x-ray half-maximum peak of 15 arcs. © 2002 American Institute of Physics.
ACCESSION #
5884245

 

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