TITLE

Hole and electron field-effect mobilities in nanocrystalline silicon deposited at 150 °C

AUTHOR(S)
Cheng, I-Chun; Wagner, Sigurd
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p440
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Field-effect structures were made from nanocrystalline silicon (nc-Si:H) deposited at a substrate temperature of 150 °C by plasma-enhanced chemical vapor deposition excited at 80 MHz. The nc-Si:H channel layer was grown on top of a separate nc-Si:H buffer and seed layer that serves to develop the crystalline structure. Staggering the contacts and the gate ensures that mobilities are measured precisely in the last-to-grow nc-Si:H layer. The hole mobility in saturation reaches 0.06–0.2 cm2 V-1 s-1 and the electron mobility ∼12 cm2 V-1 s-1. These results suggest that large-area circuits of complementary p- and n-channel devices can be made from nc-Si:H deposited on low-temperature substrates. © 2002 American Institute of Physics.
ACCESSION #
5884239

 

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