Photoluminescence properties of MgS/CdSe quantum wells and quantum dots

Funato, M.; Balocchi, A.; Bradford, C.; Prior, K. A.; Cavenett, B. C.
January 2002
Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p443
Academic Journal
The optical properties of MgS/CdSe quantum structures grown by molecular beam epitaxy are characterized by photoluminescence (PL) spectroscopy. The increase in the CdSe thickness from 1 to beyond 3 ML results in the formation of, at first, quantum wells (QWs) and then quantum dots (QDs) by Stranski–Krastanov growth. The PL temperature dependence measurements reveal that, in the QWs, excitons localized by potential fluctuations principally govern the PL properties, which is in strong contrast to the QD PL properties. © 2002 American Institute of Physics.


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