GaN metal–oxide–semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation

Fu, D. J.; Kwon, Y. H.; Kang, T. W.; Park, C. J.; Baek, K. H.; Cho, H. Y.; Shin, D. H.; Lee, C. H.; Chung, K. S.
January 2002
Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p446
Academic Journal
GaN metal–oxide–semiconductor (MOS) capacitors were fabricated by using Ga oxide formed by photoelectrochemical oxidation of GaN. The electrical properties of the MOS structures as characterized by capacitance–voltage measurement were found to be dependent on the oxidation time and posttreatment. Positive flatband voltage was observed in devices with thin oxide layers indicating the existence of negative oxide charge. Very thin oxide exhibits high capacitance and reverse leakage, which can be reduced by rapid thermal annealing (RTA). Passivation of the interface by RTA is partially responsible for the improvement. Thicker oxide layers exhibit improved electrical properties. Low density of interface states (∼10[sup 11] eV[sup -1] cm[sup -2]) was obtained in the Ga-oxide/GaN structure grown under optimized conditions. © 2002 American Institute of Physics.


Related Articles

  • HfOxNy gate dielectric on p-GaAs. Dalapati, G. K.; Sridhara, A.; Wong, A. S. W.; Chia, C. K.; Chi, D. Z. // Applied Physics Letters;2/16/2009, Vol. 94 Issue 7, pN.PAG 

    Plasma nitridation method is used for nitrogen incorporation in HfO2 based gate dielectrics for future GaAs-based devices. The nitrided HfO2 (HfOxNy) films on p-GaAs improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, hysteresis,...

  • Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses. Paterson, G. W.; Holland, M. C.; Thayne, I. G.; Long, A. R. // Journal of Applied Physics;Dec2011, Vol. 110 Issue 11, p114115 

    The admittance characteristics of a well understood oxide system of Gd0.25 Ga0.15 O0.60/Ga2 O3 on In0.53 Ga0.47As are studied at low temperature where the majority of the defect states are frozen. The capacitance-voltage (C-V) characteristics are broadened beyond those expected for an ideal...

  • On the interface state density at In0.53Ga0.47As/oxide interfaces. Brammertz, G.; Lin, H.-C.; Caymax, M.; Meuris, M.; Heyns, M.; Passlack, M. // Applied Physics Letters;11/16/2009, Vol. 95 Issue 20, p202109 

    The authors model the capacitance-voltage (CV) behavior of In0.53Ga0.47As metal-oxide-semiconductor (MOS) structures and compare the results to experimental CV-curves. Due to the very low conduction band density of states, ideal III-V MOS structures should present an asymmetric CV behavior, with...

  • Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics. Higashiwaki, Masataka; Sasaki, Kohei; Kamimura, Takafumi; Hoi Wong, Man; Krishnamurthy, Daivasigamani; Kuramata, Akito; Masui, Takekazu; Yamakoshi, Shigenobu // Applied Physics Letters;9/16/2013, Vol. 103 Issue 12, p123511 

    Single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field-effect transistors were fabricated on a semi-insulating β-Ga2O3 (010) substrate. A Sn-doped n-Ga2O3 channel layer was grown by molecular-beam epitaxy. Si-ion implantation doping was performed to source and drain electrode...

  • Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation. Brady, F. T.; Li, S. S.; Burk, D. E.; Krull, W. A. // Applied Physics Letters;3/14/1988, Vol. 52 Issue 11, p886 

    Capacitance-voltage measurements were used to analyze buried oxide layers formed by the implantation of oxygen into silicon substrates. The analysis is based on the extension of conventional metal/oxide/semiconductor capacitor theory to the two buried oxide interfaces of the...

  • Reliability of metal-oxide-semiconductor capacitors on nitrogen implanted 4H-silicon carbide. Treu, M.; Burte, E.P.; Schorner, R.; Friedrichs, P.; Stephani, D.; Russel, H. // Journal of Applied Physics;9/1/1998, Vol. 84 Issue 5, p2943 

    Focuses on the examination of the quality of thermal oxides on n-type four hydrogen-silicon carbide implanted metal-oxide semiconductor. Implantation of nitrogen; Use of atomic force microscopy to determine the status of the surface; Barrier height of the interface.

  • Electrical characterization of Pb centers in (100)Si-SiO2 structures: The influence of surface... Ragnarsson, Lars-Ake; Lundgren, Per // Journal of Applied Physics;7/15/2000, Vol. 88 Issue 2, p938 

    Measures capacitance-voltage on Cr-gated metal-oxide-silicon structures with ultrathin thermal oxides. Determination of activation energies for the passivation of the Pb center; Device fabrication; Post metallization anneal.

  • Degradation of ultrathin oxides by iron contamination. Choi, B. D.; Schroder, D. K. // Applied Physics Letters;10/15/2001, Vol. 79 Issue 16, p2645 

    Iron-contaminated oxides of metal-oxide-semiconductor devices were investigated to study gate oxide integrity (GOI) degradation dependence on oxide thickness for oxide thicknesses from 3 to 5 nm and iron densities from 4×10[sup 10] to 1.4×10[sup 12] cm[sup -3]. In contrast to other...

  • Nature of the E’ deep hole trap in metal-oxide-semiconductor oxides. Witham, H. S.; Lenahan, P. M. // Applied Physics Letters;9/28/1987, Vol. 51 Issue 13, p1007 

    We have found through a sequence of ultraviolet illuminations, electron spin resonance measurements, and capacitance versus voltage measurements, that the E’ deep hole trap in metal-oxide-semiconductor silicon dioxide is a fundamentally reversible defect. Our results are totally...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics