Large remanent polarization and coercive force by 100% 180° domain switching in epitaxial Pb(Zr[sub 0.5]Ti[sub 0.5])O[sub 3] capacitor

Ishida, Junichi; Yamada, Takatoshi; Sawabe, Atsuhito; Okuwada, Kumi; Saito, Keisuke
January 2002
Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p467
Academic Journal
Pb(Zr[sub 0.5]Ti[sub 0.5])O[sub 3] (PZT) thin film was heteroepitaxially grown on an iridium/magnesium oxide (Ir/MgO) (001) substrate using the metalo-organic decomposition method, and its crystal orientation and ferroelectric properties were investigated. The Ir film by rf-magnetron sputtering on a MgO single crystal showed high crystallinity with the full width at half maximum of 0.2°. The obtained PZT film has a tetragonal structure. Reciprocal space mapping revealed that it consisted of only c-axis orientation. The Ir/PZT/Ir capacitor showed the remanent polarization of 45 μ C/cm[sup 2] and a coercive force of 100 kV/cm. These large values were derived from 100% 180° domain switching, which state is difficult to realize in bulky single crystal and ceramics because of piezostress relaxation. © 2002 American Institute of Physics.


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