TITLE

Single InP/GaInP quantum dots studied by scanning tunneling microscopy and scanning tunneling microscopy induced luminescence

AUTHOR(S)
Ha˚kanson, U.; Johansson, M. K.-J.; Persson, J.; Johansson, J.; Pistol, M.-E.; Montelius, L.; Samuelson, L.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/21/2002, Vol. 80 Issue 3, p494
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied the optical and structural properties of single, self-assembled InP quantum dots (QDs) overgrown with nominally 5 nm of GaInP, using an ultrahigh-vacuum scanning tunneling microscope (STM) operating at low temperatures. The STM is combined with an optical detection system, which allows us to detect the emission from individual quantum dots with high spatial resolution. We find that the InP QDs act as nucleation points for the GaInP overgrowth, where the strain induced by the overlayer give rise to a QD emission around 1.46 eV. © 2002 American Institute of Physics.
ACCESSION #
5884221

 

Related Articles

  • Photon mapping of quantum dots using a scanning tunneling microscope. Håkanson, U.; Johansson, M. K.-J.; Holm, M.; Pryor, C.; Samuelson, L.; Seifert, W.; Pistol, M.-E. // Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4443 

    Scanning tunneling microscopy (STM) and scanning tunneling luminescence (STL) have been used to investigate the geometric and optical properties of individual self-assembled InP quantum dots overgrown with a thin layer of GaInP. STL spectra and monochromatic photon maps were used to correlate...

  • InAs/GaAs(001) quantum dots close to thermodynamic equilibrium. Costantini, G.; Manzano, C.; Songmuang, R.; Schmidt, O. G.; Kern, K. // Applied Physics Letters;5/12/2003, Vol. 82 Issue 19, p3194 

    InAs/GaAs(001) quantum dots are grown at high temperature and extremely low flux and analyzed by in situ scanning tunneling microscopy. A bimodal distribution of dots is observed, composed of "small" and "large" islands. While the former show a broad distribution of sizes and shapes, the latter...

  • Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces. Borgstrom, M.; Samuelson, L.; Seifert, W.; Mikkelsen, A.; Ouattara, L.; Lundgren, E. // Applied Physics Letters;12/8/2003, Vol. 83 Issue 23, p4830 

    We present a cross-sectional scanning-tunneling microscopy investigation of twofold stacked InAs quantum dots in InP, between layers of GaInAs. The dots are vertically aligned, and images with atomic resolution show that the dots consist of pure InAs. Despite the intended twofold stacking of...

  • Observation of quantum size and alloying effects of single InGaAs quantum dots on GaAs(001) by scanning tunneling spectroscopy. Yamauchi, T.; Ohyama, Y.; Matsuba, Y.; Tabuchi, M.; Nakamura, A. // Applied Physics Letters;10/8/2001, Vol. 79 Issue 15, p2465 

    We have investigated the morphologies and gap energies of In[sub 0.46]Ga[sub 0.54]As quantum dots (QDs) by using scanning tunneling microscopy/spectroscopy. The measured gap energy increases with decreasing dot height in the range of 1.7–6.6 nm. The gap energy has been calculated using a...

  • Cross-sectional scanning tunneling microscopy study of InGaAs quantum dots on GaAs(001) grown by heterogeneous droplet epitaxy. Liu, N.; Lyeo, H. K.; Shih, C. K.; Oshima, M.; Mano, T.; Koguchi, N. // Applied Physics Letters;6/10/2002, Vol. 80 Issue 23, p4345 

    We present a cross-sectional scanning tunneling microscopy (STM) study of heterogeneous-droplet-epitaxy (HDE)-grown InGaAs quantum dots (QDs). We found that the structural properties of HDE-grown QDs such as size, shape, etc., are quite different from that of Stranski-Krastanov (SK)-grown InGaAs...

  • Lateral indium–indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots. Shin, B.; Lita, B.; Goldman, R. S.; Phillips, J. D.; Bhattacharya, P. K. // Applied Physics Letters;8/19/2002, Vol. 81 Issue 8, p1423 

    We have investigated lateral In-In pair correlations within the wetting layers of buried InAs/GaAs quantum dots imaged with cross-sectional scanning tunneling microscopy. We quantified the number of In-In pairs along the [110] direction as a function of the spacing between them. Since the number...

  • Light intensity imaging of single InAs quantum dots using scanning tunneling microscope. Tsuruoka, T.; Ohizumi, Y.; Ushioda, S. // Applied Physics Letters;5/12/2003, Vol. 82 Issue 19, p3257 

    Light intensity images of self-assembled p-type InAs quantum dots (QDs) embedded in Al[SUB0.6]Ga[SUB0.4]As were measured by injecting electrons from the tip of a scanning tunneling microscope at room temperature. Bright round features appeared in the images for different photon energies. The...

  • Atom-resolved scanning tunneling microscopy of vertically ordered InAs quantum dots. Wu, Warren; Tucker, John R.; Solomon, Glenn S.; Harris Jr., James S. // Applied Physics Letters;8/25/1997, Vol. 71 Issue 8, p1083 

    Presents atom-resolved scanning tunneling microscopy (STM) images of vertically ordered indium arsenide (InAs) quantum dots. Agreement of STM images with structural imaging; Observation of monotonic diameter changes in some dots; Revelation of several details of electronic structure.

  • Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy. Cirlin, G. É.; Petrov, V. N.; Masalov, S. A.; Golubok, A. O.; Ledentsov, N. N. // Technical Physics Letters;Nov97, Vol. 23 Issue 11, p893 

    Multilayer structures of InGaAs/GaAs quantum dots fabricated by submonolayer migration-stimulated epitaxy have been studied experimentally by scanning tunneling microscopy and results are presented. These results clearly show that in multilayer structures, ordering of nano-objects into rows...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics