Simulations of the spectrum from a photoionized Si plasma

Lihua, Bao; Zeqing, Wu; Bin, Duan; Yongkun, Ding; Jun, Yan
February 2011
Physics of Plasmas;Feb2011, Vol. 18 Issue 2, p023301
Academic Journal
In order to interpret the spectrum of a photoionized Si plasma, we calculate the level populations and emissions using a collisional-radiative equilibrium model with detailed atomic data. In our calculations, levels with principal quantum number up to 9 are included and the electron impact processes are also taken into account. The peak around 1855 eV, which is not reproduced in the previous simulation, is obvious in the present results. Spectra analyzing shows that this peak mainly comes from the intercombination line of He-like Si. Our calculations indicate that the electron impact processes enhance this intercombination line about once, although the electron temperature is pretty low.


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