TITLE

In situ growth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy

AUTHOR(S)
Schenk, H. P. D.; de Mierry, P.; Venne´gue`s, P.; Tottereau, O.; Lau¨gt, M.; Vaille, M.; Feltin, E.; Beaumont, B.; Gibart, P.; Ferna´ndez, S.; Calle, F.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p174
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A series of distributed GaN-AlGaN Bragg reflectors (DBR) has been grown on Al[sub 2]O[sub 3](0001) substrates by metalorganic vapor phase epitaxy. The growth of the GaN template as well as of the GaN–Al[sub x]Ga[sub 1-x]N quarter-wave stack has been monitored by laser reflectometry. The evolution of the in situ reflectivity as well as DBR reflection spectra are discussed as function of the Al[sub x]Ga[sub 1-x]N composition x. © 2002 American Institute of Physics.
ACCESSION #
5845135

 

Related Articles

  • Determination of the azimuthal orientational spread of GaN films by x-ray diffraction. Sun, Yue Jun; Brandt, Oliver; Liu, Tian Yu; Trampert, Achim; Ploog, Klaus H.; Bläsing, Jürgen; Krost, Alois // Applied Physics Letters;12/23/2002, Vol. 81 Issue 26, p4928 

    We present a simple but reliable method to determine the azimuthal orientational spread of imperfect epitaxial layers by x-ray diffraction. This method requires the measurement of to-scans in skew geometry from reflections with increasing lattice plane inclination ψ, and a fit of the data by...

  • Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition. Kwon, Ho Ki; Ho Ki Kwon; Eiting, C. J.; Eiting, C.J.; Lambert, D. J. H.; Lambert, D.J.H.; Wong, M. M.; Wong, M.M.; Dupuis, R. D.; Dupuis, R.D.; Liliental-Weber, Z.; Benamara, M. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    GaN epitaxial layers with different crystalline quality grown on sapphire substrates by metalorganic chemical vapor deposition are investigated using time-resolved photoluminescence at 300 K. It is found that the time-dependent photoluminescence of low-quality GaN decays faster than that of the...

  • Structural perfection of GaN epitaxial layers according to x-ray diffraction measurements. Kyutt, R. N.; Ratnikov, V. V.; Mosina, G. N.; Shcheglov, M. P. // Physics of the Solid State;Jan99, Vol. 41 Issue 1, p25 

    Two- and three-crystal diffractometric study of the structural perfection of GaN epitaxial films grown on sapphire, GaAs, and SiC substrates is reported. The diffraction intensity distributions around the reciprocal-lattice points are shown to be extended in the direction parallel to the...

  • Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence. Usikov, A. S.; Tret�yakov, V. V.; Lundin, V. V.; Zadiranov, Yu. M.; Pushnyi, B. V.; Konnikov, S. G. // Technical Physics Letters;Apr99, Vol. 25 Issue 4, p253 

    A study was made of the growth regimes of undoped epitaxial GaN layers under various substrate nitriding conditions. It was observed that at a nitriding temperature of ~ 1000�C films are formed with typical growth characteristics in the form of hexagonal pyramids separated by a smoothed...

  • Photoluminescence from wurtzite GaN under hydrostatic pressure. Sangsig Kim; Herman, Irving P. // Applied Physics Letters;7/17/1995, Vol. 67 Issue 3, p380 

    Examines the photoluminescence (PL) spectrum of undoped epitaxial wurtzite GaN (gallium nitride) layers on sapphire for applied hydrostatic pressures. Characteristics of GaN; Relevance of pressure dependence of the PL of GaN; Magnitudes of the linear and quadratic pressure coefficients for...

  • Direct observation of the initial nucleation and epitaxial growth of metastable cubic GaN on.... Trampert, A.; Brandt, O. // Applied Physics Letters;2/3/1997, Vol. 70 Issue 5, p583 

    Presents the direct observation of the initial nucleation and epitaxial growth of metastable cubic gallium nitride (GaN). Growth of GaN on (001) gallium arsenide (GaAs) molecular beam epitaxy; Use of transmission electron microscopy; Occurrence of magic mismatch between cubic GaN and GaAs;...

  • Epitaxial relationships between GaN and Al[sub 2]O[sub 3](0001) substrates. Grandjean, N.; Massies, J. // Applied Physics Letters;2/3/1997, Vol. 70 Issue 5, p643 

    Explores the occurrence of different epitaxial relationship between gallium nitride (GaN) and aluminum[sub 2]oxygen[sub 3](0001) substrates. Use of transmission electron microscopy; Growth of GaN thin layer by molecular beam epitaxy; Effect of pre-growth substrate nitridation on GaN orientation;...

  • Maskless epitaxial lateral overgrowth of GaN layers on structured Si(111) substrates. Strittmatter, A.; Rodt, S.; Reißmann, L.; Bimberg, D.; Schro¨der, H.; Obermeier, E.; Riemann, T.; Christen, J.; Krost, A. // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p727 

    GaN layers are laterally overgrown by metalorganic chemical vapor deposition on structured Si(111) substrates in a single growth process. The substrates are structured with parallel grooves along the Si <1-10> or perpendicular to the Si <1-10> direction by standard photolithography and...

  • Optical properties of GaN epilayers on sapphire. Tchounkeu, Magloire; Briot, Olivier; Gil, Bernard; Alexis, Jean Paul; Aulombard, Roger-Louis // Journal of Applied Physics;11/1/1996, Vol. 80 Issue 9, p5352 

    Deals with a study which investigated the optical properties of gallium nitride epilayers grown by metal-organic vapor-phase epitaxy on (0001)-oriented sapphire. Experimental procedures used in growing the epilayers; Analysis of optical properties; Conclusion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics