High carrier injection optical switch based on two-mode interference in SiGe alloy

Li, Baojun; Chua, Soo-Jin
January 2002
Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p180
Academic Journal
Based on the two-mode interference principle, the high carrier injection effect, and the free-carrier plasma dispersion effect, a directional coupling active optical switch in SiGe/Si alloy has been fabricated. Its insertion loss and crosstalk were measured to be 2.74 and -15.5 dB, respectively, at the wavelength of 1.3 μm and the total switching current of 110 mA. The fastest response time of the switch is up to 30 ns. © 2002 American Institute of Physics.


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