Marked enhancement of 320–360 nm ultraviolet emission in quaternary In[sub x]Al[sub y]Ga[sub 1-x-y]N with In-segregation effect

Hirayama, Hideki; Kinoshita, Atsuhiro; Yamabi, Takayoshi; Enomoto, Yasushi; Hirata, Akira; Araki, Tsutomu; Nanishi, Yasushi; Aoyagi, Yoshinobu
January 2002
Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p207
Academic Journal
We demonstrated room-temperature (RT) intense ultraviolet (UV) emission in the wavelength range of 315–370 nm from quaternary In[sub x]Al[sub y]Ga[sub 1-x-y]N alloys grown by metalorganic vapor-phase epitaxy. We found that the UV emission is considerably enhanced by the In-segregation effect upon introducing 2%–5% of In into AlGaN. The In incorporation in quaternary In[sub x]Al[sub y]Ga[sub 1-x-y]N is markedly enhanced with the increase of Al content when using a relatively high growth temperature (830–850 °C), resulting in efficient RT UV emission. Maximally efficient emission was obtained at around 330–360 nm from the fabricated quaternary In[sub x]Al[sub y]Ga[sub 1-x-y]N (x=2.0%–4.8%,y=12%–34%). The intensity of the 330 nm emission from quaternary In[sub 0.034]Al[sub 0.12]Ga[sub 0.85]N was as strong as that of the 430 nm emission from In[sub 0.22]Ga[sub 0.78]N at RT. We clearly observed In segregation of submicron size from cathode luminescence images of quaternary InAlGaN films. © 2002 American Institute of Physics.


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