Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (112¯0)

Negoro, Y.; Miyamoto, N.; Kimoto, T.; Matsunami, H.
January 2002
Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p240
Academic Journal
High-dose ion implantation of phosphorus into 4H–SiC has been investigated. Phosphorus ion implantation with a 1×10[sup 16] cm[sup -2] dose at 800 °C into 4H–SiC (0001) has resulted in a sheet resistance of 80 Ω/□ after annealing at 1700 °C. A similar sheet resistance of 110 Ω/□ was achieved even by room-temperature implantation when 4H–SiC (112¯0) was employed, owing to excellent recrystallization of this face revealed by Rutherford backscattering channeling spectroscopy. The sheet resistance could be further reduced down to 27 Ω/□ by 800 °C implantation into 4H–SiC (112¯0) followed by annealing at 1700 °C. 4H–SiC (112¯0) showed a very flat surface after annealing. © 2002 American Institute of Physics.


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