TITLE

Electronic properties of antidot lattices fabricated by atomic force lithography

AUTHOR(S)
Dorn, A.; Sigrist, M.; Fuhrer, A.; Ihn, T.; Heinzel, T.; Ensslin, K.; Wegscheider, W.; Bichler, M.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p252
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Antidot lattices were fabricated by atomic force lithography using local oxidation. High quality finite 20×20 lattices are demonstrated with periods of 300 nm. The low-temperature magnetoresistance shows well developed commensurability oscillations as well as a quenching of the Hall effect around zero magnetic field. In addition, we find B-periodic oscillations superimposed on the classical commensurability peaks at temperatures as high as 1.7 K. These observations indicate the high electronic quality of our samples. © 2002 American Institute of Physics.
ACCESSION #
5845108

 

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