Donor and acceptor concentrations in degenerate InN

Look, D. C.; Lu, H.; Schaff, W. J.; Jasinski, J.; Liliental-Weber, Z.
January 2002
Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p258
Academic Journal
A formalism is presented to determine donor (N[sub D]) and acceptor (N[sub A]) concentrations in wurtzitic InN characterized by degenerate carrier concentration (n) and mobility (μ). The theory includes scattering not only by charged point defects and impurities, but also by charged threading dislocations, of concentration N[sub dis]. For a 0.45-μm-thick InN layer grown on Al[sub 2]O[sub 3] by molecular beam epitaxy, having N[sub dis]=5×10[sup 10] cm[sup -2], determined by transmission electron microscopy, n(20 K)=3.5×10[sup 18] cm[sup -3] and μ(20 K)=1055 cm[sup 2]/V s, determined by Hall effect measurements, the fitted values are N[sub D]=4.7×10[sup 18] cm[sup -3] and N[sub A]=1.2×10[sup 18] cm[sup -3]. The identities of the donors and acceptors are not known, although a comparison of N[sub D] with analytical data, and also with calculations of defect formation energies, suggests that a potential candidate for the dominant donor is H. © 2002 American Institute of Physics.


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