Film thickness dependence of the NiSi-to-NiSi[sub 2] transition temperature in the Ni/Pt/Si(100) system

Liu, J. F.; Feng, J. Y.; Zhu, J.
January 2002
Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p270
Academic Journal
The effect of film thickness on the NiSi-to-NiSi[sub 2] transition temperature in the Ni/Pt/Si(100) system has been studied. Three sets of Ni/Pt/Si(100) bilayered samples with the same Ni:Pt ratios but with different film thicknesses were annealed by rapid thermal annealing at 750–900 °C. Both the x-ray diffraction analysis and the sheet resistance measurement show that the thermal stability of Ni(Pt)Si films improves with a decrease in film thickness. This property of Ni(Pt)Si films reveals the good potential for its applications in ultrashallow junctions. The experimental results are explained in terms of classical nucleation theory. © 2002 American Institute of Physics.


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