TITLE

Film thickness dependence of the NiSi-to-NiSi[sub 2] transition temperature in the Ni/Pt/Si(100) system

AUTHOR(S)
Liu, J. F.; Feng, J. Y.; Zhu, J.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p270
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effect of film thickness on the NiSi-to-NiSi[sub 2] transition temperature in the Ni/Pt/Si(100) system has been studied. Three sets of Ni/Pt/Si(100) bilayered samples with the same Ni:Pt ratios but with different film thicknesses were annealed by rapid thermal annealing at 750–900 °C. Both the x-ray diffraction analysis and the sheet resistance measurement show that the thermal stability of Ni(Pt)Si films improves with a decrease in film thickness. This property of Ni(Pt)Si films reveals the good potential for its applications in ultrashallow junctions. The experimental results are explained in terms of classical nucleation theory. © 2002 American Institute of Physics.
ACCESSION #
5845102

 

Related Articles

  • Fine structure effects and phase transition of Xe nanocrystals in Si. Faraci, G.; Pennisi, A. R.; Zontone, F. // European Physical Journal B -- Condensed Matter;May2006, Vol. 51 Issue 2, p209 

    We report on an X-ray diffraction study performed on Xe agglomerates obtained by ion implantation in a Si matrix. At low temperature, Xe nano-crystals were formed in Si with different average sizes according to the preparation procedure. High resolution diffraction spectra were detected as a...

  • Mechanism of crystallization of the Ni70Mo10B20 alloy above the glass transition temperature. Abrosimova, G. E.; Aronin, A. S.; Ignat'eva, E. Yu. // Physics of the Solid State;Mar2006, Vol. 48 Issue 3, p563 

    The phase transformations occurring in the Ni70Mo10B20 alloy in the course of heating above the glass transition temperature are investigated using x-ray diffraction, transmission electron microscopy, high-resolution electron microscopy, and differential scanning calorimetry. It is shown that...

  • Interdiffusion study of amorphous Ni–Si multilayer at low temperature. Wang, W. H.; Bai, H. Y.; Wang, W. K. // Journal of Applied Physics;8/15/1993, Vol. 74 Issue 4, p2471 

    Presents a study which investigated the interdiffusion phenomena in the amorphous nickel-silicon multilayer by an in situ x-ray diffraction technique. Experimental methods used; Description of the cross-sectional high resolution transmission electron microscopy image of the microstructure of...

  • Effect of the substrate surface condition on the Ni(thin film)/SiC(0001) interfacial reaction. Dean, Cory R.; Robbie, Kevin; Madsen, Lynnette D. // Journal of Materials Research;Sep2007, Vol. 22 Issue 9, p24 

    The effect of the substrate surface, structure, and chemistry on the interfacial interaction in Ni(thin film)/SiC was examined, with a focus on the recently discovered formation of a nickel intercalated graphite phase. Very thin Ni films (~7 nm) were deposited onto heated 6H-SiC(0001) substrates...

  • The Magnetic and Structural Properties of SiC-Doped MgB Bulks Prepared by the Standard Ceramic Processing. Dilek, T.; Koparan, E. Taylan; Başoğlu, M.; Yanmaz, E. // Journal of Superconductivity & Novel Magnetism;Feb2011, Vol. 24 Issue 1/2, p495 

    ording to general formula MgBSiC ( x=0,0.05,0.1,0.2), MgB and SiC-doped bulk superconductors were prepared by the standard ceramic processing. The mixtures of the corresponding powders were sintered at 750 °C for 0.5 h under pressure of 8 bar Argon. X-ray diffraction patterns show that all...

  • The Effects of Nonstoichiometry in High- T... Superconducting Properties of YBa[sub2]Cu[sub 3+x])[7-d]. Onwuagba, Beniah Ndudim // Turkish Journal of Physics;2002, Vol. 26 Issue 5, p403 

    Discusses a study which investigated the effects of nonstoichiometry on the resistance slope above transition temperature T[subc] and X-ray diffraction patterns for polycrystalline samples. Process of the preparation made for the samples; Technique used for the electrical resistance...

  • A study on exchange coupled structures of Fe/NiO and NiO/Fe interfaced with n- and p-silicon substrates. Srivastava, Neelabh; Srivastava, P. C. // Journal of Applied Physics;Jun2012, Vol. 111 Issue 12, p123909 

    Interfacial structures of ferromagnetic (FM)/antiferromagnetic (AF) (Fe/NiO) and AF/FM (NiO/Fe) on n- and p-Si substrates have been realized by sequential deposition of FM and AF layers on the silicon substrates by electron beam evaporation technique. The structures have been characterized from...

  • Crystalline silicon growth in nickel/a-silicon bilayer. Mohiddon, Md Ahamad; Naidu, K. Lakshun; Dalba, G.; Rocca, F.; Krishna, M. Ghanashyam // AIP Conference Proceedings;Feb2013, Vol. 1512 Issue 1, p686 

    The effect of substrate temperature on amorphous Silicon crystallization, mediated by metal impurity is reported. Bilayers of Ni(200nm)/Si(400nm) are deposited on fused silica substrate by electron beam evaporator at 200 and 500 °C. Raman mapping shows that, 2 to 5 micron size crystalline...

  • X-ray diffraction study of undercooled molten silicon. Kimura, Hidekazu; Watanabe, Masahito; Izumi, Koichi; Hibiya, Taketoshi; Holland-Moritz, Dirk; Schenk, Thomas; Bauchspieß, Karl Rudolf; Schneider, Stephan; Egry, Ivan; Funakoshi, Kenichi; Hanfland, Michael // Applied Physics Letters;1/29/2001, Vol. 78 Issue 5, p604 

    The short-range order of molten silicon was investigated in a wide temperature range from 1893 K down to 1403 K, corresponding to an undercooling of 290 K. Energy-dispersive x-ray diffraction was used in combination with electromagnetic levitation. The structure factor and the pair correlation...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics