TITLE

Selective growth of single InAs quantum dots using strain engineering

AUTHOR(S)
Lee, B. C.; Lin, S. D.; Lee, C. P.; Lee, H. M.; Wu, J. C.; Sun, K. W.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/14/2002, Vol. 80 Issue 2, p326
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A method to achieve ordering and selective positioning of single InAs self-assembled quantum dots (QDs) has been developed. The selective growth was achieved by manipulating the strain distribution on the sample surface. The QDs are formed on predesigned mesas with added strain. Single dots were obtained on small mesas. Using this technique, two-dimensional single QD arrays have been achieved. © 2002 American Institute of Physics.
ACCESSION #
5845081

 

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