TITLE

Integrally gated carbon nanotube-on-post field emitter arrays

AUTHOR(S)
Hsu, David S. Y.; Shaw, Jonathan
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p118
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Multiwalled carbon nanotubes were grown using chemical vapor deposition on the tops of blunt vertical silicon posts in cells having a horizontal gate aperture of conventional field emitter design. We obtained over 1 mA total emission current from a single array, or 0.3 µA per cell at 40 V. In addition to the low voltage operation, the most distinctive differences from conventional field emitter arrays include their stability and the lack of catastrophic arcing without any special sample preparation.
ACCESSION #
5792122

 

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