TITLE

Effects of artificial defects on the electrical transport of single-walled carbon nanotubes

AUTHOR(S)
Park, J. W.; Kim, Jinhee; Lee, J.-O.; Kang, K. C.; Kim, J.-J.; Yoo, K.-H.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p133
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the effect of defects on the electrical transport properties of metallic single-walled carbon nanotubes (SWNTs). The defects are artificially induced by ion implantation and by deforming the SWNT with the SiO[sub 2] film deposited on it. Both defects are observed to act as gate-tunable electron scatters. With the dual gate structure, it is also shown that the scattering strength by the defect at a given back-gate voltage can be tuned by adjusting the top gate.
ACCESSION #
5792117

 

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