Responsivities of n-type GaAs/InGaAs/AlGaAs step multiple-quantum-well infrared detectors

Cheah, C. W.; Karunasiri, G.; Tan, L. S.; Zhou, L. F.
January 2002
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p145
Academic Journal
The responsivities of bound-to-bound transitions in an n-type Al[sub 0.15]Ga[sub 0.85]As/GaAs/In[sub 0.15]Ga[sub 0.85]As multiple-quantum-well infrared photodetector had been measured, using both the 45° facet edge coupling scheme as well as direct back side illumination. It was found that the transverse electric (TE) mode responsivity was slightly redshifted in the 9 µm spectral region, and its magnitude was about 1%, with respect to the mixed TE and transverse magnetic (TM) mode infrared radiation, when direct back side illumination was employed. These observations were in good agreement with theoretical calculations using a 14-band k.p model. The much larger TE response observed when the 45° facet edge coupling scheme was employed was probably due to mesa edge scattering.


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