Band anticrossing effects in Mg[sub y]Zn[sub 1-y]Te[sub 1-x]Se[sub x] alloys

Wu, J.; Walukiewicz, W.; Yu, K. M.; Ager, J. W.; Shan, W.; Haller, E. E.; Miotkowski, I.; Ramdas, A. K.; Miotkowska, S.
January 2002
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p34
Academic Journal
The electronic structures of Mg[sub y]Zn[sub 1-y]Te[sub 1-x]Se[sub x] alloys were studied by optical absorption and photoluminescence techniques under applied hydrostatic pressure. In samples with both x and y ≠ 0, the band gap exhibits a strongly nonlinear pressure dependence which is similar to the effects observed previously in ZnTe[sub 1-x]Se[sub x] and ZnTe[sub 1-x]S[sub x] ternaries and that is well explained by the anticrossing interaction of the selenium localized electronic states with the conduction band of the matrix. In contrast, the pressure dependence of the band gap in Mg[sub y]Zn[sub 1-y]Te (i.e., x = 0) is not significantly changed in form from that of ZnTe; it is concluded that the effects of alloying MgTe with ZnTe can be well understood within the virtual crystal approximation.


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