TITLE

Band anticrossing effects in Mg[sub y]Zn[sub 1-y]Te[sub 1-x]Se[sub x] alloys

AUTHOR(S)
Wu, J.; Walukiewicz, W.; Yu, K. M.; Ager, J. W.; Shan, W.; Haller, E. E.; Miotkowski, I.; Ramdas, A. K.; Miotkowska, S.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p34
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The electronic structures of Mg[sub y]Zn[sub 1-y]Te[sub 1-x]Se[sub x] alloys were studied by optical absorption and photoluminescence techniques under applied hydrostatic pressure. In samples with both x and y ≠ 0, the band gap exhibits a strongly nonlinear pressure dependence which is similar to the effects observed previously in ZnTe[sub 1-x]Se[sub x] and ZnTe[sub 1-x]S[sub x] ternaries and that is well explained by the anticrossing interaction of the selenium localized electronic states with the conduction band of the matrix. In contrast, the pressure dependence of the band gap in Mg[sub y]Zn[sub 1-y]Te (i.e., x = 0) is not significantly changed in form from that of ZnTe; it is concluded that the effects of alloying MgTe with ZnTe can be well understood within the virtual crystal approximation.
ACCESSION #
5792099

 

Related Articles

  • Electronic structure of Rh, Pt, In, and Sn in the mixed-valence systems Eu(Rh[sub 1-x]Pt[sub x])[sub 2] and U(In[sub 1-x]Sn[sub x])[sub 3]. Smirnov, Yu. P.; Sovestnov, A. E.; Shaburov, V. A.; Tyunis, A. V. // Physics of the Solid State;Sep99, Vol. 41 Issue 9, p1399 

    The electronic structure of Rh, Pt, In, and Sn in the mixed-valence systems Eu(Rh[sub 1-x]Pt[sub x])[sub 2] and U(In[sub 1-x]Sn[sub x])[sub 3] has been studied by the x-ray K line-shift method. It has been found that the occupation of the Rh 4d-shell in Eu(Rh[sub 1-x]Pt[sub x])[sub 2] is higher...

  • Effect of spin orbit on the electronic properties of zinc-blende compounds. Al-Douri, Y.; Khenata, R.; Chelahi-Chikr, Z.; Driz, M.; Aourag, H. // Journal of Applied Physics;10/1/2003, Vol. 94 Issue 7, p4502 

    The empirical pseudopotential method with spin-orbit splitting is used to calculate the band structure of AlSb, GaSb, ZnTe, and CdTe. The electronic band structures appear direct gap. We have tested recent empirical model of ionicity factor under effect of spin–orbit interaction. A...

  • Theoretical Investigation of the Electronic and Spatial Structures of the La Impurity in a BaF2 Crystal. Korol', Yu. L.; Rybalko, A. F.; Sobolev, A. B.; Kuznetsov, A. Yu.; Varaksin, A. N. // Russian Physics Journal;Feb2003, Vol. 46 Issue 2, p126 

    The results of theoretical investigations of the electronic structure of BaF2 and LaF3 crystals and BaF2–LaF3 complexes without and with La impurity are presented. Changes in the structure of the state density, electronic spectrum, and effective charges caused by defects are analyzed. It...

  • Calculation of electron and hole impact ionization coefficients in SiGe alloys. Yeom, K.; Hinckley, J. M.; Singh, J. // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p6773 

    Presents a study which calculated the electron and hole impact ionization coefficients in SiGe alloys. Description of the band structure of material; Band structure for electron transport; Application of the tight-binding method in the band structure for hole transport.

  • Calculated electronic structure of GaAs/Ge2 (001) superlattices. Rufinus, J.; Crook, G.E. // Journal of Applied Physics;1/15/1997, Vol. 81 Issue 2, p758 

    Examines the electronic structure of gallium arsenide/germanium superlattices using the semiempirical tight binding method. Lack of correspondence between the calculated band structures of superlattices and those for gallium arsenide/germanium random alloys; Indirect band gaps of superlattices;...

  • Electronic structure of elements and compounds and electronic phases of solids. Nadykto, B. A. // AIP Conference Proceedings;2000, Vol. 532 Issue 1, p418 

    The paper reviews technique [1] and computed energies for various electronic states of many-electron multiply charged ions, molecular ions, and electronic phases of solids. The model used allows computation of the state energy for free many-electron multiply charged ions with relative accuracy...

  • Magnetic property and electronic structure of itinerant Pd[sub x]Co[sub y]O[sub 2] magnets. Okabe, H.; Matoba, M.; Kyomen, T.; Itoh, M. // Journal of Applied Physics;5/15/2003, Vol. 93 Issue 10, p7258 

    The electronic structure of the delafossite-type compound PdCoO[SUB2] is calculated by the full potential linear muffin-tin orbital method and the magnetic property of the composition modified (defect injection introduced) compound (Pd[SUB0.72]Co[SUB0.68]O[SUB2] was investigated. The calculation...

  • Resonant tunneling through low dimensional quantum structures. Sa’ar, A.; Feng, J.; Gravé, I.; Yariv, A. // Journal of Applied Physics;10/15/1992, Vol. 72 Issue 8, p3598 

    Studies the tunneling mechanism in zero- and one-dimensional quantum structures. Development of a generalized transfer matrix method; Analysis of the subband mixing process; Evaluation of the coupling coefficients between the subbands.

  • Electronic structure disorder, vibronic coupling, and charge transfer excitons in poly(fluorene-alt-bithiophene):fullerene films. Riisness, I.; Gordon, M. J. // Applied Physics Letters;3/18/2013, Vol. 102 Issue 11, p113302 

    Charge transfer processes in conjugated polymer:fullerene blends play an important role in the operation of organic solar cells and organic light emitting diodes. Herein, near-infrared emission from poly-(9,9-dioctylfluorene-alt-bithiophene) (F8T2) and [6,6]-phenyl-C61-butyric acid methyl ester...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics