Efficient 230–280 nm emission from high-Al-content AlGaN-based multiquantum wells

Hirayama, Hideki; Enomoto, Yasushi; Kinoshita, Atsuhiro; Hirata, Akira; Aoyagi, Yoshinobu
January 2002
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p37
Academic Journal
We demonstrated efficient ultraviolet (UV) photoluminescence (PL) with the wavelength ranging from 230 to 280 nm from Al[sub x]Ga[sub 1-x]N(AlN)/Al[sub y]Ga[sub 1-y]N multiquantum wells (MQWs) grown on SiC by metalorganic vapor phase epitaxy. We systematically investigated the PL intensity of the AlGaN-based MQWs with wide-band-gap AlGaN barriers as functions of QW thickness and Al content of barriers. Single-peak, efficient PL emission was obtained at 282-234 nm at 77 K from Al[sub x]Ga[sub 1-x]N(AlN)/Al[sub y]Ga[sub 1-y]N 5-layer MQWs with approximately 1.5-nm-thick active layers by changing the Al content of the AlxGa[sub 1-x]N barriers from 53% to 100%. The efficiency of the deep-UV emission from AlGaN-based QWs was as high as that of blue emission from InGaN-based QWs at 77 K.


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