Orientation effects in tBN/cBN interfaces: A transmission electron microscopic study

Li, Quan; Bello, I.; Marks, L. D.; Lifshitz, Y.; Lee, S. T.
January 2002
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p46
Academic Journal
The orientation between cubic boron nitride (cBN) crystallites and the tBN layers on which they grow was studied using high-resolution transmission electron microscopy. BN films were prepared by radio-frequency magnetron sputtering under conditions leading to the formation of ∼100% cBN films grown on a preceding tBN layer. Two types of orientations were observed: (i) cBN layers grown on the edges of the tBN(0002) planes so that the cBN{111} planes are parallel to the tBN(0002) planes (as reported previously by many authors), (ii) cBN layers grown on curved tBN(0002) planes with no orientation to the tBN planes. The first type of cBN growth is associated with stress leading to delamination of cBN films thicker than 100 nm. The second type is associated with reduced stress enabling the growth of much thicker (∼500 nm) films at a relatively low (450 °C) substrate deposition temperature. These results may be helpful in the fabrication of thick cBN films and improving our understanding of the cBN nucleation process.


Related Articles

  • Z-contrast investigation of the ordered atomic interface of CoSi[sub 2]/Si(001) layers. Chisholm, M.F.; Browning, N.D. // Applied Physics Letters;6/27/1994, Vol. 64 Issue 26, p3608 

    Examines the atomic structure of mesotaxial CoSi[sub 2]/Si(001) interfaces by Z-contrast scanning transmission electron microscopy. Details on the Z-contrast image of the CoSi[sub 2]Si(001) interface; Factors affecting the reduction of cobalt concentration in silicide; Compositional ordering of...

  • Interfacial reactions in ultrahigh vacuum deposited Y-Si multilayer thin films. Lee, T. L.; Chen, L. J. // Journal of Applied Physics;2/15/1994, Vol. 75 Issue 4, p2007 

    Presents a study that examined interfacial reactions of ultrahigh vacuum deposited yttrium-silicon multilayer thin films. Application of high-resolution transmission electron microscopy; Formation of an amorphous yttrium-silicon intermixing layer; Composition of the layer; Homogenization in...

  • Atomic structure of Si/TbSi2/(111)Si double-heterostructure interfaces. Luo, C. H.; Chen, F. R.; Chen, L. J. // Journal of Applied Physics;11/15/1994, Vol. 76 Issue 10, p5744 

    Deals with a study which analyzed the atomic structure of the Si/TbSi[sub2](111)Si double-heterostructure interfaces using high-resolution transmission electron microscopy. Experimental procedures; Coincident-site lattice models of interface structure; Conclusions.

  • Determination of the coordination number of Co atoms at the CoSi2(A,B)/Si(111) interface by transmission electron microscopy. Bulle-Lieuwma, C. W. T.; de Jong, A. F.; van Ommen, A. H.; van der Veen, J. F.; Vrijmoeth, J. // Applied Physics Letters;8/14/1989, Vol. 55 Issue 7, p648 

    The atomic structure of the (111) interface between CoSi2 (type A and B) and Si is investigated by high-resolution transmission electron microscopy, combined with image simulations. Type B interfaces of CoSi2 layers formed by thermal reaction of vapor deposited Co on (111) oriented Si, of...

  • Imaging of the grain-to-grain epitaxy in NiFe/FeMn thin-film couples. Hwang, Cherngye; Geiss, Roy H.; Howard, J. Kent // Journal of Applied Physics;11/15/1988, Vol. 64 Issue 10, p6115 

    Presents a study which performed an imaging of the NiFe/FeMn interface in which the grain-to-grain epitaxial relationship can be clearly demonstrated by plane-view and cross-section transmission electron microscope observations. Experimental procedures; Results and discussion; Conclusion.

  • Reaction of the Si/Ta/Ti system: C40 TiSi[sub 2] phase formation and in situ kinetics. Via, F. La; Mammoliti, F.; Grimaldi, M. G. // Journal of Applied Physics;1/15/2002, Vol. 91 Issue 2, p633 

    The effect of a thin Ta layer at the Si/Ti interface on the intermediate phase formation has been studied in detail by in situ sheet resistance, X-ray diffraction and transmission electron microscopy of partially reacted samples. When a Ta layer is deposited at the Si/Ti interface, a new...

  • Interface structure of CdSe/ZnSe epilayers. Wu, Xue-Hua; Peng, Zhong-Ling; Yuan, Shi-Xing; Li, Fang-Hua // Journal of Applied Physics;4/15/1995, Vol. 77 Issue 8, p3818 

    Presents information on a study that investigated interface microstructure and strain relaxation of atomic-layer-epitaxy-grown CdSe on ZnSe/GaAs by using transmission electron microscopy and high resolution transmission electron microscopy techniques. Methodology of the study; Results and...

  • Cross-sectional transmission electron microscopic study of Au/GaP and Au/InP contacts. Pécz, B.; Veresegyházy, R.; Radnóczi, G.; Barna, A.; Mojzes, I.; Geszti, O.; Vincze, Gy. // Journal of Applied Physics;7/1/1991, Vol. 70 Issue 1, p332 

    Studies cross-sectional transmission electron microscopic study of the interface reaction between gold and gallium phosphorus. Method of the study; Results and discussion; Conclusion.

  • Interface characterization and thermal stability of Co/Al–O/CoFe spin-dependent tunnel junctions. Lin, Minn-Tsong; Ho, C. H.; Yao, Y. D.; Huang, R. T.; Liao, C. C.; Chen, F. R.; Kai, J. J. // Journal of Applied Physics;5/15/2002 Part 1, 2 & 3, Vol. 91 Issue 10, p7475 

    A detailed study of the interface properties as well as the thermal stability has been done for the Co/Al-O/CoFe/NiFe magnetic tunnel junction, by using high resolution transmission electron microscopy equipped with energy dispersive x-ray spectrum. The Al behaves more stable against thermal...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics