Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation

Fitz, C.; Kolitsch, A.; Mo¨ller, W.; Fukarek, W.
January 2002
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p55
Academic Journal
It is demonstrated that the intrinsic stress in cubic boron nitride films can be significantly relaxed during growth by simultaneous medium-energy ion implantation. The stress in the growing film has been studied in situ using cantilever curvature measurements and has been reduced to below 2 GPa by simultaneous Ar[sup +] or N[sup +] ion implantation with an energy of 70 and 35 keV, respectively. The resulting cubic boron nitride films show an increased long-term stability. The results reveal that the stress in cBN is not reduced due to segregation of boron at grain boundaries.


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