TITLE

Effect of scattering by strain fields surrounding edge dislocations on electron transport in two-dimensional electron gases

AUTHOR(S)
Jena, Debdeep; Mishra, U. K.
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p64
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We present a theory of deformation potential carrier scattering of two-dimensional electron gases from the strain fields surrounding edge dislocations. The scattering rate is evaluated in closed form without any fitting parameters. The result is directed towards understanding mobility limiting scattering mechanisms for two-dimensional electron gases at AlGaN/GaN heterointerfaces.
ACCESSION #
5792087

 

Related Articles

  • Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells. Cheng-Ying Huang; Law, Jeremy J. M.; Hong Lu; Jena, Debdeep; Rodwell, Mark J. W.; Gossard, Arthur C. // Journal of Applied Physics;2014, Vol. 115 Issue 12, p123711-1 

    We have investigated the growth and electron transport in In0.53Ga0.47As/AlAs0.56Sb0.44 two dimensional electron gases (2DEG) and compared their properties with In0.53Ga0.47As/In0.52Al0.48As 2DEGs. For 10 nm thick InGaAs wells, the electron mobility of InGaAs/AlAsSb 2DEGs is comparable to that...

  • A comprehensive model for Coulomb scattering in inversion layers. Gámiz, F.; López-Villanueva, J. A.; Jiménez-Tejada, J. A.; Melchor, I.; Palma, A. // Journal of Applied Physics;1/15/1994, Vol. 75 Issue 2, p924 

    Provides information on a study that proposed a general model for Coulomb scattering in inversion layers and can be directly applied to any heterointerface in which a quasi-two-dimensional electron gas field is confined. Information on the theory; Simulation results and discussion; Conclusions.

  • Effect of threading dislocations on mobility in selectively doped heterostructures grown on Si substrates. Ohori, T.; Ohkubo, S.; Kasai, K.; Komeno, J. // Journal of Applied Physics;4/1/1994, Vol. 75 Issue 7, p3681 

    Presents a study which investigated the effect of threading dislocation scattering on the mobility of a two-dimensional electron gas. Theoretical background; Methods used; Results.

  • Nonlocal effects in a two-dimensional electron gas with a periodic lattice of scatterers. Budantsev, M. V.; Kvon, Z. D.; Pogosov, A. G.; Plotnikov, A. E.; Moshegov, N. T.; Toropov, A. I. // JETP Letters;3/10/96, Vol. 63 Issue 5, p347 

    The nonlocal resistance of a two-dimensional electron gas in a periodic lattice of antidots is investigated. Anomalous growth of this resistance is observed when 2Rc≊d (Rc is the Larmor radius). This growth is caused by the appearance of runaway trajectories, skipping along the antidots...

  • Transport of edge localized modes energy and particles into the scrape off layer and divertor of DIII-D. Leonard, A. W.; Osborne, T. H.; Fenstermacher, M. E.; Groebner, R. J.; Groth, M.; Lasnier, C. J.; Mahdavi, M. A.; Petrie, T. W.; Snyder, P. B.; Watkins, J. G.; Zeng, L. // Physics of Plasmas;May2003, Vol. 10 Issue 5, p1765 

    The reduction in size of Type I edge localized modes (ELMs) with increasing density is explored in DIII-D [J. L. Luxon, Nucl. Fusion 42, 614 (2002)] for the purpose of studying the underlying transport of ELM energy. The separate convective and conductive transport of energy due to an ELM is...

  • Influence of interface roughness on two-dimensional electron gas streaming transport in GaN-based heterostructures. Polyakov, V. M.; Schwierz, F. // Journal of Applied Physics;11/15/2006, Vol. 100 Issue 10, p103704 

    Streaming transport of the two-dimensional (2D) electron gas in a model GaN-based heterostructure is investigated using the ensemble Monte Carlo simulation method. It is demonstrated that interface roughness (IFR) scattering, being, in contrast to three-dimensional (3D) transport, an additional...

  • Molecule-interface coupling effects on electronic transport in molecular wires. Yaliraki, Sophia N.; Ratner, Mark A. // Journal of Chemical Physics;9/22/1998, Vol. 109 Issue 12, p5036 

    Focuses on molecule interface interaction for studies on electronic transport in molecular wire circuits using time dependent scattering formalism. Observation of conductance in adlayers of molecules; Transport through two identical wire; Dependence of conductance on wire length.

  • Shape effects on scattering in three-dimensional quantum wires. Vargiamidis, Vassilios; Valassiades, O. // Journal of Applied Physics;7/1/2002, Vol. 92 Issue 1, p302 

    We study the effects of the shape of the cross section of a three-dimensional quantum wire on electron scattering from a single point defect in the wire. The confinement of electrons is modeled by both hard- and soft-wall potentials. We find that as the degree of anisotropy of the cross section...

  • Effects of grain boundary scattering on the electron drift velocity behavior in diamond films: A Monte Carlo analysis. Joshi, R. P.; Srivastava, A. // Applied Physics Letters;9/16/1996, Vol. 69 Issue 12, p1786 

    Monte Carlo calculations of the electron drift velocity in polycrystalline diamond are presented based on a formulation that includes grain boundary scattering. Our results indicate field dependent reductions of the drift velocity in polycrystalline diamond. The grain boundaries are predicted to...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics