Engineering of Si surfaces by electrochemical grafting of p-nitrobenzene molecules

Hartig, P.; Rappich, J.; Dittrich, Th.
January 2002
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p67
Academic Journal
The changes of the band bending and of the nonradiative (nr) surface recombination are investigated by use of photovoltage and photoluminescence techniques during the electrochemical deposition of p-nitrobenzene molecules on atomically flat and rough hydrogenated as well as on chemically oxidized Si(111) surfaces. A simple and well-reproducible procedure has been developed for electrochemical grafting of organic molecules on hydrogenated Si surfaces in aqueous electrolytes. The grafting of a monolayer of p-nitrobenzene molecules on atomically flat p-Si(111):H surfaces induces a change of the band bending of about 0.1 eV and the amount of nr surface defects, N[sub s], is only slightly increased by a factor of about 3 (N[sub s] < 1011 cm[sup -2]) with respect to the hydrogenated Si surface. The role of the formation of radicals for the engineering of Si surfaces is discussed.


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