TITLE

Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H–SiC substrate by HCl gas etching

AUTHOR(S)
Onojima, Norio; Suda, Jun; Matsunami, Hiroyuki
PUB. DATE
January 2002
SOURCE
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p76
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident (√3x√3) R30° surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics.
ACCESSION #
5792082

 

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