Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H–SiC substrate by HCl gas etching

Onojima, Norio; Suda, Jun; Matsunami, Hiroyuki
January 2002
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p76
Academic Journal
Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident (√3x√3) R30° surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics.


Related Articles

  • Aluminum nitride/silicon carbide multilayer heterostructure produced by plasma-assisted,.... Rowland, L.B.; Kern, R.S.; Tanaka, S.; Davis, Robert F. // Applied Physics Letters;6/21/1993, Vol. 62 Issue 25, p3333 

    Investigates the aluminum nitride (AlN)/silicon carbide multilayer heterostructures produced by gas-source molecular beam epitaxy. Use of reactive radio frequency sputtering in forming AlN substrates; Potential of AlN for optoelectronic devices; Indication of film quality from reflection...

  • Investigation of β-SiC precipitation in Si[sub 1-y]C[sub y] epilayers by x-ray scattering at grazing incidence. Kovats, Z.; Metzger, T. H.; Peisl, J.; Stangl, J.; Mu¨hlberger, M.; Zhuang, Y.; Scha¨ffler, F.; Bauer, G. // Applied Physics Letters;6/5/2000, Vol. 76 Issue 23 

    We have investigated molecular-beam-epitaxy-grown, pseudomorphic Si[sub 1-y]C[sub y] epilayers (y≤0.015) on Si(001) after ex situ annealing by x-ray scattering at grazing incidence. The diffuse intensity around the Si (220) surface reflection consists of Huang scattering due to the...

  • Growth of AIN by metalorganic molecular beam epitaxy. MacKenzie, J.D.; Abernathy, C.R. // Applied Physics Letters;7/10/1995, Vol. 67 Issue 2, p253 

    Investigates the growth of aluminum nitride by metalorganic molecular beam epitaxy. Use of amine bonded alane precursors from a compact electron cyclotron resonance plasma source; Impurity backgrounds and surface morphologies for nitrogen and alane sources; Application of atomic force microscopy.

  • Si[sub 1-y]C[sub y]/Si(001) gas-source molecular beam epitaxy from Si[sub 2]H[sub 6] and CH[sub 3]SiH[sub 3]: Surface reaction paths and growth kinetics. Foo, Y. L.; Bratland, K. A.; Cho, B.; Desjardins, P.; Greene, J. E. // Journal of Applied Physics;4/1/2003, Vol. 93 Issue 7, p3944 

    In situ surface probes and postdeposition analyses were used to follow surface reaction paths and growth kinetics of Si[sub 1-y]C[sub y] alloys grown on Si(001) by gas-source molecular-beam epitaxy from Si[sub 2]H[sub 6]/CH[sub 3]SiH[sub 3] mixtures as a function of C concentration y (0-2.6 at...

  • Carbon incorporation in Si[sub 1-y]C[sub y] alloys grown by molecular beam epitaxy using a single silicon–graphite source. Dashiell, M. W.; Kulik, L. V.; Hits, D.; Kolodzey, J.; Watson, G. // Applied Physics Letters;2/16/1998, Vol. 72 Issue 7 

    Pseudomorphic Si[sub 1-y]C[sub y] alloys on silicon (100) were grown by molecular beam epitaxy using a single effusion source of silicon contained in a graphite crucible, producing carbon concentrations of y=0.008. The behavior of carbon incorporation using this source was studied as a function...

  • Carbonization process for low-temperature growth of 3C-SiC by the gas-source molecular-beam epitaxial method. Motoyama, Shin-ichi; Morikawa, Norikazu; Nasu, Masaaki; Kaneda, Shigeo // Journal of Applied Physics;7/1/1990, Vol. 68 Issue 1, p101 

    Focuses on a study which determined the results of the carbonization process for low-temperature growth of silicon carbide by the gas-source molecular-beam epitaxial method. Details of the carbonization process; Methodology of the study; Results and discussion.

  • Heteroepitaxial growth of single crystalline 3C-SiC on Si substrates by gas source molecular beam epitaxy. Yoshinobu, Tatsuo; Mitsui, Hideaki; Tarui, Yoichiro; Fuyuki, Takashi; Matsunami, Hiroyuki // Journal of Applied Physics;9/1/1992, Vol. 72 Issue 5, p2006 

    Focuses on a study which investigated heteroepitaxial growth of 3C-SiC on silicon substrates by gas source molecular beam epitaxy. Way in which both Si(001) and Si(111) were carbonized; Description of the silicon carbide material; Suitability of the material; Instrument that 3C-SiC is...

  • Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy. Cimalla, V.; Stauden, Th.; Ecke, G.; Scharmann, F.; Eichhorn, G.; Pezoldt, J.; Sloboshanin, S.; Schaefer, J. A. // Applied Physics Letters;12/14/1998, Vol. 73 Issue 24 

    Silicon carbide can be reproducibly grown on (111)Si below 600 °C by carbonization using an elemental solid carbon source in molecular beam epitaxy. The initial stages were observed by in situ reflection high-energy electron diffraction. Prior to silicon carbide growth, the continuous carbon...

  • Effects of 6H-SiC surface reconstruction on lattice relaxation of AlN buffer layers in molecular-beam epitaxial growth of GaN. Suda, Jun; Miura, Kouhei; Honaga, Misako; Nishi, Yusuke; Onojima, Norio; Matsunami, Hiroyuki // Applied Physics Letters;12/30/2002, Vol. 81 Issue 27, p5141 

    Growth of GaN on on-axis 6H-SiC (0001)[sub Si] substrates with an AlN buffer layer was performed by molecular-beam epitaxy. The effects of SiC surface reconstruction on the lattice relaxation of AlN buffer layers and the crystalline quality of GaN layers were studied. High-temperature HCl-gas...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics