Multilayer TiC/TiN diffusion barrier films for copper

Yoganand, S. N.; Raghuveer, M. S.; Jagannadham, K.; Wu, L.; Karoui, A.; Rozgonyi, G.
January 2002
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p79
Academic Journal
TiC/TiN thin films deposited by reactive magnetron sputtering on Si (100) substrates were investigated by transmission electron microscopy for microstructure and by deep level transient spectroscopy (DLTS) for diffusion barrier against copper. TiN thin films deposited on Si substrates at a substrate temperature of 600 °C were textured, and TiC thin films deposited at the same temperature were polycrystalline. TiC/TiN multilayer films also showed the same characteristics with the formation of an additional interaction layer. The diffusion barrier characteristics of the TiC/TiN/Si were determined by DLTS and the results showed that the films completely prevented diffusion of copper into Si.


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