Rutile-type oxide-diluted magnetic semiconductor: Mn-doped SnO[sub 2]

Kimura, H.; Fukumura, T.; Kawasaki, M.; Inaba, K.; Hasegawa, T.; Koinuma, H.
January 2002
Applied Physics Letters;1/7/2002, Vol. 80 Issue 1, p94
Academic Journal
Epitaxial films of an oxide-diluted magnetic semiconductor with rutile structure, Mn-doped SnO[sub 2], have been fabricated by pulsed-laser deposition. As the Mn content increases, systematic changes in lattice constants and in-gap absorption are observed. Magnetization measurements show almost paramagnetic behavior. The injection of n-type carrier over 10[sup 20] cm[sup -3] is achieved by Sb doping. A Sn[sub 0.95]Mn[sub 0.05]O[sub 2] :Sb film shows giant positive magnetoresistance as large as 60% at 5 K.


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