TITLE

Enhanced annealing of implantation-induced defects in 4H-SiC by thermal oxidation

AUTHOR(S)
Lo\vlie, L. S.; Svensson, B. G.
PUB. DATE
January 2011
SOURCE
Applied Physics Letters;1/31/2011, Vol. 98 Issue 5, p052108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Annealing of the prominent Z1/2 defect in 4H-SiC has been studied after thermal treatment in N2 and O2 atmospheres at 1150 °C subsequent to implantation with MeV Si-ions to doses in the range of (1-4)×108 cm-2. The annealing rate is found to be significantly enhanced under oxidizing conditions, while in N2 atmosphere Z1/2 remains stable. Hence, a substantial lowering of the annealing temperature required for defect removal in 4H-SiC doped by ion-implantation may be expected using oxidizing annealing atmosphere. Concentration versus depth profiles of Z1/2 clearly show that it is annihilated by defect species injected from the SiO2/4H-SiC interface during oxidation. The injection rate of the in-diffusing species is found to be about (1.2±0.2)×106 cm-2 s-1, and the concentration ratio of the injected species relative to the native atoms originally present in the oxidized volume is ∼1×10-7. A model where the annihilating species are injected from the surface with a diffusion coefficient of about 10-8 cm2/s yields excellent agreement with the experimental data.
ACCESSION #
57822836

 

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